Growth and Electronic Properties of SnSe 2 Films on Reconstructed, (111)-Oriented SrTiO 3 Substrates

Dong, Xi; Pham, Tuan Anh; Xu, Chunqiang; He, Yining; Lai, Wei; Ke, Xianglin; Zhang, Pengpeng

doi:10.1021/acs.jpcc.3c04609

Growth and Electronic Properties of SnSe ₂ Films on Reconstructed, (111)-Oriented SrTiO ₃ Substrates

Journal Article · 16 August 2023 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.3c04609· OSTI ID:2420967

Dong, Xi ^[1]; Pham, Tuan Anh ^[2]; Xu, Chunqiang ^[2]; He, Yining ^[3]; ^[3]; Ke, Xianglin ^[2]; ^[2]

Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, United States; OSTI
Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, United States
Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824, United States

Not provided.

Research Organization:: Michigan State Univ., East Lansing, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0019120

OSTI ID:: 2420967

Journal Information:: Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Journal Issue: 33 Vol. 127; ISSN 1932-7447

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

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Growth and Electronic Properties of SnSe ₂ Films on Reconstructed, (111)-Oriented SrTiO ₃ Substrates