Geometrical Doping at the Atomic Scale in Oxide Quantum Materials
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea; CompAID Research, Suwon 16419, Republic of Korea; OSTI
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea; Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, United States
- Department of Energy Engineering, Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
- Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Physics, Soongsil University, Seoul 06978, Republic of Korea
- Department of Physics, University of California Davis, Davis, California 95616, United States
- Division of Physics & Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore
- Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, United States
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea; CompAID Research, Suwon 16419, Republic of Korea
Not provided.
- Research Organization:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- FG02-06ER46327
- OSTI ID:
- 2419172
- Journal Information:
- ACS Nano, Journal Name: ACS Nano Journal Issue: 15 Vol. 17; ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
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