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Geometrical Doping at the Atomic Scale in Oxide Quantum Materials

Journal Article · · ACS Nano
 [1];  [2];  [3];  [4];  [5];  [6];  [4];  [5];  [6];  [7];  [8];  [9];  [10]
  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea; CompAID Research, Suwon 16419, Republic of Korea; OSTI
  2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
  3. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea; Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, United States
  4. Department of Energy Engineering, Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
  5. Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
  6. Department of Physics, Soongsil University, Seoul 06978, Republic of Korea
  7. Department of Physics, University of California Davis, Davis, California 95616, United States
  8. Division of Physics & Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore
  9. Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, United States
  10. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea; CompAID Research, Suwon 16419, Republic of Korea
Not provided.
Research Organization:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
FG02-06ER46327
OSTI ID:
2419172
Journal Information:
ACS Nano, Journal Name: ACS Nano Journal Issue: 15 Vol. 17; ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

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