Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H–Si Using STM and DFT
- Atom Scale Device Group, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States; OSTI
- Atom Scale Device Group, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States; Joint Quantum Institute, University of Maryland, College Park, Maryland 20740, United States
- Atom Scale Device Group, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
- Atom Scale Device Group, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States; Department of Physics, University of Maryland, College Park, Maryland 20740, United States
Not provided.
- Research Organization:
- Zyvex Labs, LLC, Richardson, TX (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- EE0008311
- OSTI ID:
- 2418613
- Journal Information:
- ACS Nano, Journal Name: ACS Nano Journal Issue: 11 Vol. 16; ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atom-by-Atom Fabrication of Single and Few Dopant Quantum Devices
Optimizing surface defects for atomic-scale electronics: Si dangling bonds
Journal Article
·
2019
· Advanced Functional Materials
·
OSTI ID:1799477
Optimizing surface defects for atomic-scale electronics: Si dangling bonds
Journal Article
·
2017
· Physical Review Materials
·
OSTI ID:1489279