Interface Engineering by Intermediate Hydrogen Plasma Treatment Using Dc-PECVD for Silicon Heterojunction Solar Cells

Soman, Anishkumar; Das, Ujjwal K.; Hegedus, Steven S.

doi:10.1021/acsaelm.2c01336

Interface Engineering by Intermediate Hydrogen Plasma Treatment Using Dc-PECVD for Silicon Heterojunction Solar Cells

Journal Article · 24 January 2023 · ACS Applied Electronic Materials

DOI:https://doi.org/10.1021/acsaelm.2c01336· OSTI ID:2418507

^[1]; ^[2]; Hegedus, Steven S. ^[3]

Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware19716, United States; Institute of Energy Conversion, University of Delaware, Newark, Delaware19716, United States; OSTI
Institute of Energy Conversion, University of Delaware, Newark, Delaware19716, United States
Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware19716, United States; Institute of Energy Conversion, University of Delaware, Newark, Delaware19716, United States

Not provided.

Research Organization:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0007534

OSTI ID:: 2418507

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 2 Vol. 5; ISSN 2637-6113

Publisher:: ACS Publications

Country of Publication:: United States

Language:: English

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