Effect of Enhanced Hole Transport on the Performance of Ni/Y 2 O 3 /n-4H-SiC Epilayer Radiation Detectors

Karadavut, Omerfaruk; Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Mandal, Krishna C.

doi:10.1109/tns.2023.3306276

Effect of Enhanced Hole Transport on the Performance of Ni/Y ₂ O ₃ /n-4H-SiC Epilayer Radiation Detectors

Journal Article · 01 September 2023 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2023.3306276· OSTI ID:2418304

^[1]; Kleppinger, Joshua W. ^[2]; ^[2]; ^[2]

Department of Electrical Engineering, University of South Carolina (USC), Columbia, SC, USA; OSTI
Department of Electrical Engineering, University of South Carolina (USC), Columbia, SC, USA

Not provided.

Research Organization:: Univ. of South Carolina, Columbia, SC (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

DOE Contract Number:: NE0008662

OSTI ID:: 2418304

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 9 Vol. 70; ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (43)

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers Kleppinger, Joshua W.; Chaudhuri, Sandeep K.; Karadavut, OmerFaruk Journal of Applied Physics, Vol. 129, Issue 24 https://doi.org/10.1063/5.0049218	journal	June 2021
Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications Wang, Zhen; Zhang, Zhaofu; shao, Chen Applied Surface Science, Vol. 527 https://doi.org/10.1016/j.apsusc.2020.146843	journal	October 2020
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices Mandal, Krishna C.; Kleppinger, Joshua W.; Chaudhuri, Sandeep K. Micromachines, Vol. 11, Issue 3 https://doi.org/10.3390/mi11030254	journal	February 2020
Radiation detection using fully depleted 50 μ m thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects Chaudhuri, Sandeep K.; Kleppinger, Joshua W.; Mandal, Krishna C. Journal of Applied Physics, Vol. 128, Issue 11 https://doi.org/10.1063/5.0021403	journal	September 2020
Improved performance of SiC radiation detector based on metal–insulator–semiconductor structures Jia, Yuping; Shen, Yutong; Sun, Xiaojuan Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 997 https://doi.org/10.1016/j.nima.2021.165166	journal	May 2021
Electrical properties of the titanium acceptor in silicon carbide Dalibor, Thomas; Pensl, Gerhard; Nordell, Nils Physical Review B, Vol. 55, Issue 20 https://doi.org/10.1103/physrevb.55.13618	journal	May 1997
Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors Mandal, Krishna C.; Chaudhuri, Sandeep K.; Nguyen, Khai V. IEEE Transactions on Nuclear Science, Vol. 61, Issue 4 https://doi.org/10.1109/tns.2014.2335736	journal	August 2014
Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors Mandal, Krishna C.; Krishna, Ramesh M.; Muzykov, Peter G. IEEE Transactions on Nuclear Science, Vol. 58, Issue 4 https://doi.org/10.1109/tns.2011.2152857	journal	August 2011
Effect of Z _1/2 , EH ₅ , and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V. Journal of Applied Physics, Vol. 115, Issue 22 https://doi.org/10.1063/1.4883317	journal	June 2014
Relationship between threading dislocation and leakage current in 4H-SiC diodes Fujiwara, Hirokazu; Naruoka, Hideki; Konishi, Masaki Applied Physics Letters, Vol. 100, Issue 24 https://doi.org/10.1063/1.4718527	journal	June 2012
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors Lang, D. V. Journal of Applied Physics, Vol. 45, Issue 7 https://doi.org/10.1063/1.1663719	journal	July 1974
A novel Ni/Y2O3/4H-SiC heteroepitaxial metal–oxide–semiconductor (MOS) betavoltaic cell Chaudhuri, Sandeep K.; Nag, Ritwik; Mandal, Krishna C. Journal of Materials Science: Materials in Electronics, Vol. 34, Issue 6 https://doi.org/10.1007/s10854-023-09971-x	journal	February 2023
Radiation Detection Using n-Type 4H-SiC Epitaxial Layer Surface Barrier Detectors Chaudhuri, Sandeep K.; Mandal, Krishna C. Advanced Materials for Radiation Detection https://doi.org/10.1007/978-3-030-76461-6_9	book	August 2021
A theory of ion beam induced charge collection Breese, M. B. H. Journal of Applied Physics, Vol. 74, Issue 6 https://doi.org/10.1063/1.354471	journal	September 1993
Deep levels created by low energy electron irradiation in 4H-SiC Storasta, L.; Bergman, J. P.; Janzén, E. Journal of Applied Physics, Vol. 96, Issue 9 https://doi.org/10.1063/1.1778819	journal	November 2004
Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies Mannan, Mohammad A.; Nguyen, Khai V.; Pak, Rahmi O. IEEE Transactions on Nuclear Science, Vol. 63, Issue 2 https://doi.org/10.1109/tns.2016.2535212	journal	April 2016
High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces Apostolopoulos, G.; Vellianitis, G.; Dimoulas, A. Applied Physics Letters, Vol. 81, Issue 19 https://doi.org/10.1063/1.1519727	journal	November 2002
Electrical Properties of Pulsed Laser Deposited Y[sub 2]O[sub 3] Gate Oxide on 4H–SiC Quah, Hock Jin; Lim, Way Foong; Wimbush, Stuart C. Electrochemical and Solid-State Letters, Vol. 13, Issue 11 https://doi.org/10.1149/1.3481926	journal	January 2010
Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers Storasta, Liutauras; Tsuchida, Hidekazu; Miyazawa, Tetsuya Journal of Applied Physics, Vol. 103, Issue 1 https://doi.org/10.1063/1.2829776	journal	January 2008
Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy Muzykov, Peter G.; Krishna, Ramesh M.; Mandal, Krishna C. Journal of Applied Physics, Vol. 111, Issue 1 https://doi.org/10.1063/1.3675513	journal	January 2012
Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor Zhang, J.; Storasta, L.; Bergman, J. P. Journal of Applied Physics, Vol. 93, Issue 8 https://doi.org/10.1063/1.1543240	journal	April 2003
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
The Evolution of Silicon Wafer Cleaning Technology Kern, Werner Journal of The Electrochemical Society, Vol. 137, Issue 6 https://doi.org/10.1149/1.2086825	journal	January 1990
Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition Lowndes, D. H.; Geohegan, D. B.; Puretzky, A. A. Science, Vol. 273, Issue 5277, p. 898-903 https://doi.org/10.1126/science.273.5277.898	journal	August 1996
Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation Karadavut, OmerFaruk; Chaudhuri, Sandeep K.; Kleppinger, Joshua W. Applied Physics Letters, Vol. 121, Issue 1 https://doi.org/10.1063/5.0089236	journal	July 2022
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach Chaudhuri, Sandeep K.; Zavalla, Kelvin J.; Mandal, Krishna C. Applied Physics Letters, Vol. 102, Issue 3 https://doi.org/10.1063/1.4776703	journal	January 2013
Silicon Carbide Microstrip Radiation Detectors Puglisi, Donatella; Bertuccio, Giuseppe Micromachines, Vol. 10, Issue 12 https://doi.org/10.3390/mi10120835	journal	November 2019
Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy Dalibor, T.; Pensl, G.; Matsunami, H. physica status solidi (a), Vol. 162, Issue 1 https://doi.org/10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0	journal	July 1997
Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art Ruddy, Frank H.; Ottaviani, Laurent; Lyoussi, Abdallah IEEE Transactions on Nuclear Science, Vol. 69, Issue 4 https://doi.org/10.1109/tns.2022.3144125	journal	April 2022
Charge collection efficiency in the presence of non-uniform carrier drift mobilities and lifetimes in photoconductive detectors Kasap, S. O.; Kabir, M. Z.; Ramaswami, Kieran O. Journal of Applied Physics, Vol. 128, Issue 12 https://doi.org/10.1063/5.0017521	journal	September 2020
Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation Kato, Masashi; Watanabe, Ohga; Mii, Toshiki Scientific Reports, Vol. 12, Issue 1 https://doi.org/10.1038/s41598-022-23691-y	journal	November 2022
Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide Mandal, Krishna C.; Muzykov, Peter G.; Krishna, Ramesh Solid State Communications, Vol. 151, Issue 7 https://doi.org/10.1016/j.ssc.2011.01.019	journal	April 2011
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications Meli, Alessandro; Muoio, Annamaria; Reitano, Riccardo Micromachines, Vol. 13, Issue 7 https://doi.org/10.3390/mi13071042	journal	June 2022
Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers Mandal, Krishna C.; Muzykov, Peter G.; Russell Terry, J. Applied Physics Letters, Vol. 101, Issue 5 https://doi.org/10.1063/1.4742741	journal	July 2012
The physics and chemistry of the Schottky barrier height Tung, Raymond T. Applied Physics Reviews, Vol. 1, Issue 1 https://doi.org/10.1063/1.4858400	journal	January 2014
Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n -4H-SiC MOS capacitors during positive bias temperature stress Samanta, Piyas; Mandal, Krishna C. Journal of Applied Physics, Vol. 121, Issue 3 https://doi.org/10.1063/1.4973674	journal	January 2017
Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection Karadavut, Omerfaruk; Chaudhuri, Sandeep K.; Kleppinger, Joshua W. IEEE Transactions on Nuclear Science, Vol. 69, Issue 8 https://doi.org/10.1109/tns.2022.3168792	journal	August 2022
High-resolution radiation detection using Ni/SiO ₂ /n-4H-SiC vertical metal-oxide-semiconductor capacitor Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Kleppinger, Joshua W. Journal of Applied Physics, Vol. 130, Issue 7 https://doi.org/10.1063/5.0059151	journal	August 2021
Electrical characterization of high k-dielectrics for 4H-SiC MIS devices Khosa, R. Y.; Chen, J. T.; Winters, M. Materials Science in Semiconductor Processing, Vol. 98 https://doi.org/10.1016/j.mssp.2019.03.025	journal	August 2019
Electron spectroscopy with a diamond detector Bodie, C. S.; Lioliou, G.; Lefeuvre, G. Applied Radiation and Isotopes, Vol. 180 https://doi.org/10.1016/j.apradiso.2021.110027	journal	February 2022
Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films Mudavakkat, V. H.; Atuchin, V. V.; Kruchinin, V. N. Optical Materials, Vol. 34, Issue 5 https://doi.org/10.1016/j.optmat.2011.11.027	journal	March 2012
Low Energy X-Ray and $\gamma$-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K. IEEE Transactions on Nuclear Science, Vol. 60, Issue 4 https://doi.org/10.1109/tns.2013.2273673	journal	August 2013
Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection Chaudhuri, Sandeep K.; Karadavut, OmerFaruk; Kleppinger, Joshua W. IEEE Electron Device Letters, Vol. 43, Issue 9 https://doi.org/10.1109/led.2022.3188543	journal	September 2022

Similar Records

Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection

Journal Article · 2022 · IEEE Electron Device Letters · OSTI ID:1980441

Alpha Particle Detection Using Highly Rectifying Ni/Ga ₂ O ₃ /4H-SiC Heteroepitaxial MOS Junction

Journal Article · 2023 · IEEE Transactions on Electron Devices · OSTI ID:2579837

Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO₂/epi-4H-SiC MOS capacitors

Journal Article · 2022 · Journal of Crystal Growth · OSTI ID:1977288

Related Subjects

Engineering
Nuclear Science & Technology

Effect of Enhanced Hole Transport on the Performance of Ni/Y 2 O 3 /n-4H-SiC Epilayer Radiation Detectors

Citation Formats

References (43)

Similar Records

Related Subjects

Effect of Enhanced Hole Transport on the Performance of Ni/Y ₂ O ₃ /n-4H-SiC Epilayer Radiation Detectors