Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments
Journal Article
·
· Applied Physics Express
- OSTI
Abstract
A sidewall treatment process is proposed to recover the external quantum efficiency (EQE) loss in AlGaInP micro-LEDs (μLEDs). The proposed sidewall treatment consists of thermal annealing, ammonium sulfide chemical treatment, and sidewall passivation using atomic-layer deposition (ALD). The devices with sidewall treatment show improved optical power of more than 500% and 190% at 5 and 100 A cm−2, respectively, compared to devices with ALD sidewall passivation. The reduction in EQE was 20% when shrinking the device dimensions from 100 × 100 to 20 × 20μm2. This work reveals that AlGaInPμLEDs can be energy efficient by employing proper sidewall treatments.
- Research Organization:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- EE0009691;
- OSTI ID:
- 2418097
- Journal Information:
- Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 6 Vol. 16; ISSN 1882-0778
- Publisher:
- Japan Society of Applied Physics
- Country of Publication:
- United States
- Language:
- English
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