Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO 3

Liu, Fengdeng; Golani, Prafful; Truttmann, Tristan K.; Evangelista, Igor; Smeaton, Michelle A.; Bugallo, David; Wen, Jiaxuan; Manjeshwar, Anusha Kamath; May, Steven J.; Kourkoutis, Lena F.; Janotti, Anderson; Koester, Steven J.; Jalan, Bharat

doi:10.1021/acsnano.3c04003

Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO ₃

Journal Article · 28 August 2023 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.3c04003· OSTI ID:2418087

Liu, Fengdeng ^[1]; ^[2]; Truttmann, Tristan K. ^[3]; ^[4]; ^[5]; Bugallo, David ^[6]; Wen, Jiaxuan ^[2]; Manjeshwar, Anusha Kamath ^[3]; May, Steven J. ^[7]; ^[8]; ^[4]; ^[2]; ^[3]

Department of Chemical Engineering and Materials Science, University of Minnesota−Twin Cities, Minneapolis, Minnesota 55455, United States; OSTI
Department of Electrical and Computer Engineering, University of Minnesota−Twin Cities, Minneapolis, Minnesota 55455, United States
Department of Chemical Engineering and Materials Science, University of Minnesota−Twin Cities, Minneapolis, Minnesota 55455, United States
Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States; Centro de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS), Universidade de Santiago de Compostela, Santiago de Compostela, 15782, Spain
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States; Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States

Not provided.

Research Organization:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0009344

OSTI ID:: 2418087

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 17 Vol. 17; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

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Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO 3

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Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO ₃