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Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs
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journal
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November 2019 |
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Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop
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September 2019 |
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High luminous efficacy green light-emitting diodes with AlGaN cap layer
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January 2016 |
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Band Structure and Reflectivity of GaN
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November 1974 |
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Free-carrier absorption in nitrides from first principles
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June 2010 |
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Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
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April 2013 |
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Time-resolved intervalley transitions in GaN single crystals
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February 2007 |
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Effective Confining Potential of Quantum States in Disordered Media
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February 2016 |
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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy
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December 2016 |
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Photoemission from activated gallium arsenide. I. Very-high-resolution energy distribution curves
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March 1985 |
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A self-consistent iterative scheme for one-dimensional steady state transistor calculations
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October 1964 |
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Efficiency Drop in Green InGaN / GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations
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January 2016 |
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Origin of electrons emitted into vacuum from InGaN light emitting diodes
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August 2014 |
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Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
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December 2013 |
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Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
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December 2017 |
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Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping
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November 2016 |
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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
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March 2020 |
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Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes
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August 2018 |
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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
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September 2010 |
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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
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April 2015 |
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Electronic band structure pseudopotential calculation of wurtzite III-nitride materials
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January 2006 |
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Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes
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January 2015 |
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An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
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June 2018 |
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Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport
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December 2018 |
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Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds
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November 2022 |
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Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
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June 2003 |
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Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
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June 2014 |
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Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes
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June 2014 |
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Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
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February 2008 |
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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
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July 2010 |
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Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
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November 2011 |
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Effects of strain on the band structure of group-III nitrides
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September 2014 |
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High-resolution energy analysis of field-assisted photoemission: A spectroscopic image of hot-electron transport in semiconductors
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February 1993 |
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Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs
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March 2013 |
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Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs
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August 2021 |
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Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap
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March 2019 |
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Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
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January 2015 |
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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
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April 2017 |
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Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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December 1996 |