Coherent transient grating effects and auger inhibition in InAsSb systems
- FOM-Institute Rijnhuizen (Netherlands)
- Heriot-Watt Univ., Edinburgh (United Kingdom); and others
Pump-probe measurements of interband recombination lifetimes have been performed with the Free Electron Laser (CLIO) at room temperature undoped bulk InSb. Significant bleaching near and below the fundamental absorption edge at 7{mu}m was seen near the excitation frequency, with recovery times in the range 0.2-5 ns which were found to be strongly dependent on the pump photon energy. The scattering is dominated by Auger processes, which have rates following quadratic or linear carrier density dependence in low excitation and highly degenerate regimes respectively. The coefficients for Auger recombination in InSb at room temperature were found to be 1.1{+-}0.5x10{sup -26} cm{sup 6}s{sup -1} and 4.0{+-}0.5x 10{sup -9} cm{sup 3}s{sup -1} in these two regimes. These experiments also reveal associated coherent transient grating effects for the first time in these systems. A parametric scattering of the pump pulse into the probe beam is observed at delay times smaller than the coherence length of the FEL which allows us to determine the third-order nonlinear susceptibility and the coherence length of the laser system. A preliminary bleaching experiment on an undoped strained layer superlattice (SLS) sample of InAs/InAs{sub 0.61} Sb{sub 0.39} is also reported. It is well known that the narrower the bandgap in HgCdTe alloys the easier energy and momentum conservation becomes. This SLS structure (band edge 11I{mu}m) shows strong inhibition of the Auger recombination process with lifetimes up to 30 times longer than even the bulk InSb sample (7{mu}m). This opens the possibility of a major leap into the IR for III-V semiconductor light-emitting and detection device applications.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- OSTI ID:
- 238902
- Report Number(s):
- BNL-61982-Absts.; CONF-9508156-Absts.; ON: DE96002729; TRN: 96:013396
- Resource Relation:
- Conference: 17. international free electron laser conference, New York, NY (United States), 21-25 Aug 1995; Other Information: PBD: [1995]; Related Information: Is Part Of 17th international free electron laser conference and 2nd international FEL users` workshop. Program and abstracts; PB: 300 p.
- Country of Publication:
- United States
- Language:
- English
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