Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs

Conference · Fri Mar 01 00:00:00 EST 1996

OSTI ID:238436

Schmidt, D M; Wu, A; Schrimpf, R D ^[1]; Fleetwood, D M ^[2]; Pease, R L ^[3]; Combs, W E ^[4]

---

1. Arizona Univ., Tucson, AZ (United States), Dept. of ECE
2. Sandia National Labs., Albuquerque, NM (United States)
3. RLP Research, Inc., Albuquerque, NM (United States)
4. Naval Surface Warfare Center, Crane, IN (United States). Crane Div.

The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experimentally and through simulation. The effect of increased surface recombination velocity at the base surface is moderated by positive oxide charge.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 238436
• Report Number(s): SAND-96-0564C; CONF-960773-3; ON: DE96006385; TRN: 96:015029
• Resource Relation: Conference: Institute of Electrical and Electronics Engineers/Nuclear and Space Radiation Effects conference (NSREC `96), Indian Wells, CA (United States), 15-19 Jul 1996; Other Information: PBD: [1996]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
36 MATERIALS SCIENCE
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
GAIN
INTEGRATED CIRCUITS
IONIZING RADIATIONS
TRAPPING
OXIDES