Radiation Effects Model for Ultra-Thin Silicon Solar Cells

Conference · 01 January 2023 · J.Phys.Conf.Ser.

DOI:https://doi.org/10.1088/1742-6596/2675/1/012012· OSTI ID:2346184

Fedoseyev, Alex ^[1]; Gurimskaya, Yana ^[1]; Herasimenka, Stanislau ^[1]; Reginevich, Mikhail ^[1]; Cooper, Charles ^[2]; Grdanovska, Slavica ^[2]; Kroc, Thomas ^[2]

---

1. Unlisted, US, AZ
2. Fermilab

This work is focused on investigation of radiation effects in Ultra-Thin Silicon solar cells with a particular emphasis on electron irradiation. The study is motivated by the application of these solar cells, developed by Solestial, Inc., for powering space missions, including those led by NASA, the Department Of Defence (DOD), and commercial satellite missions. Our research encompasses both experimental and theoretical approaches, addressing unique challenges posed by ultra-thin solar cell technology that deviates from the traditional models. From the experimental point of view, the test structures were irradiated with 1 MeV electrons up to the fluence of 1E+15 e/cm$$^{2}$$. Radiation effects due to accumulated electron dose were noticed as a drop in open-circuit voltage (Voc). An analytical expression for modeling the Voc characteristic of the UT-Si cell after exposure to electron irradiation was formulated and subsequently compared with experimental data. The theoretical foundation of the proposed approach builds upon the Non-Ionising Energy Loss (NIEL) concept, a fundamental parameter in addressing radiation damage modelling and survivability predictions.

• Research Organization: Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
• DOE Contract Number: AC02-07CH11359
• OSTI ID: 2346184
• Report Number(s): FERMILAB-CONF-23-0886-AD; oai:inspirehep.net:2744553
• Conference Information: Journal Name: J.Phys.Conf.Ser. Journal Issue: 1 Journal Volume: 2675
• Country of Publication: United States
• Language: English