Emerging Materials and Design Principles for Wurtzite-Type Ferroelectrics
Low-energy compute-in-memory architectures promise to reduce the energy demand for computation and data storage. Wurtzite-type ferroelectrics are promising options for both performance and integration with existing semiconductor processes. The Al1-xScxN alloy is among the few tetrahedral materials that exhibit polarization switching, but the electric field required to switch the polarization is too high (few MV/cm). Going beyond binary compounds, we explore the search space of multinary wurtzite-type compounds. Through this large-scale search, we identify four promising ternary nitrides and oxides, including Mg2PN3, MgSiN2, Li2SiO3, and Li2GeO3, for future experimental realization and engineering. In 90% of the considered multinary materials, we identify unique switching pathways and non-polar structures that are distinct from the commonly assumed switching mechanism in AlN-based materials. Our results disprove the existing design principle based on the reduction of the wurtzite c/a lattice parameter ratio when comparing different chemistries while supporting two emerging design principles - ionicity and bond strength.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 2335789
- Report Number(s):
- NREL/JA-5K00-86883; MainId:87658; UUID:f5d81721-8e82-4bbc-8f07-e519fa7fe153; MainAdminId:72267
- Journal Information:
- Matter, Vol. 7, Issue 4
- Country of Publication:
- United States
- Language:
- English
Similar Records
AlN Base Material Development for High Temperature Application [Poster]