Determination of barrier height of boron doped polycrystalline diamond thin film Schottky diodes using a capacitance-voltage technique
- Univ. of Missouri, Columbia, MO (United States); and others
Distinctive frequency dependent capacitance-voltage (C-V) characteristics of boron-doped chemical vapor deposited (CVD) diamond thin film Schottky diodes were observed. The results exhibited not only small signal differential capacitance dependence on both the reverse bias voltage and test frequency, but also linear inverse squared capacitance-voltage characteristics at all test frequencies, ranging from 1 kHz to 1 MKz. The Schottky barrier heights of both Al- and Au-hot filament CVD diamond Schottky diodes were determined to be 1.04 and 1.09 eV, respectively. An effective carrier concentration in the range of 0.5 to 1.5 x 10{sup 17}cm {sup {minus}3} was estimated. The distinct C-V characteristics obtained in this study are attributed to careful surface cleaning and the use of moderate boron doped diamond thin films.
- OSTI ID:
- 230032
- Report Number(s):
- CONF-950840-; TRN: 96:000433-0030
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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