Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
- Lukin Research Institute of Physical Problems (Russian Federation)
- National Research University (MIET) (Russian Federation)
Films of silicon nitride SiN{sub x}, obtained by plasma-enhanced chemical vapor deposition from the monosilane SiH{sub 4} and ammonia NH{sub 3} gases, are widely used in microelectronics and micro- and nanoelectromechanical systems. Residual mechanical stresses and film composition are important characteristics for many applications. The properties of SiN{sub x} films, particularly mechanical stresses and composition, depend largely on the conditions of production, e.g., the ratio of the reacting gas flow rates, the composition of the gas mixture, the power and frequency of the plasma generator, and the temperature and pressure during deposition. Despite the great volume of works on the subject, data regarding the dependence of the properties and composition of SiN{sub x} films on the conditions of production remain sparse. This work considers the effect the ratio of the reacting gas flow rates has on the mechanical stresses and composition of silicon nitride films SiN{sub x} obtained by plasma-enhanced chemical vapor deposition from gaseous mixtures of SiH{sub 4} monosilane and NH{sub 3} ammonia using low-frequency plasma. It is found that when the ratio of the gas flow rates of SiH{sub 4} and NH{sub 3} is raised from 0.016 to 0.25, the compressive mechanical stresses are reduced by 31%, the stoichiometric coefficient falls from 1.40 to 1.20, the refractive index rises from 1.91 to 2.08, the concentration of N–H bonds is reduced by a factor of 7.4, the concentration of Si–H bonds grows by a factor of 8.7, and the concentration of hydrogen atoms is reduced by a factor of 1.5. These results can be used for the controlled production of SiN{sub x} films with such specified characteristics as residual mechanical stresses, refractive index, stoichiometric coefficient, and the concentration of hydrogen-containing bonds.
- OSTI ID:
- 22945131
- Journal Information:
- Semiconductors, Vol. 52, Issue 15; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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