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Title: Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film

Abstract

The structural, Hall effect, electronic transport, and magnetic properties of Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te epitaxial thin film as prepared by pulsed laser deposition technique were reported. X-ray diffraction patterns including linear scans and phi scans confirmed that all films are high quality epitaxy and crystallinity. With the substitution of high valence Bi for Ge element, we found that the previous carriers of hole were changed to electron, which was testified by the negative slopes obtained from the measurements of Hall effect under different temperatures. The electronic transports show a typical semiconductor behavior and can be understood by the small polaron hopping model because the lattice distortions increase the electron-phonon interaction. An obvious ferromagnetic properties occur in the high Bi-doping Ge{sub 0.64}Bi{sub 0.32}Fe{sub 0.04}Te rather than in that with low Bi-doping concentration, indicating that the ferromagnetic establishment is entirely dependent on carrier’s transmissions. The first-principles calculation performed on this system also reveals that the ferromagnetic state exactly exists in the present n-type diluted magnetic semiconductors with Bi co-dopants.

Authors:
; ;  [1]; ;  [2];  [3]; ;  [4];  [5];  [6]; ;  [1]
  1. Nanjing University of Aeronautics and Astronautics, Department of Applied Physics (China)
  2. China Jiliang University, College of Materials Science and Engineering (China)
  3. Soochow University, School of Physical Science and Technology (China)
  4. Chinese Academy of Sciences, High Magnetic Field Laboratory (China)
  5. Yangzhou University, College of Physics Science and Technology (China)
  6. Suzhou University of Science and Technology, Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics (China)
Publication Date:
OSTI Identifier:
22922932
Resource Type:
Journal Article
Journal Name:
Journal of Superconductivity and Novel Magnetism
Additional Journal Information:
Journal Volume: 32; Journal Issue: 8; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1557-1939
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH COMPOUNDS; DOPED MATERIALS; ELECTRON-PHONON COUPLING; ENERGY BEAM DEPOSITION; EPITAXY; FERROMAGNETISM; GERMANIUM COMPOUNDS; HALL EFFECT; IRON COMPOUNDS; LASER RADIATION; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; N-TYPE CONDUCTORS; POLARONS; PULSED IRRADIATION; QUATERNARY ALLOY SYSTEMS; TELLURIUM COMPOUNDS; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Feng, Yu, Fan, Jiyu, Xie, Yunfei, Hong, Bo, Xu, Jingcai, Tang, Rujun, Zhang, Lei, Ling, Langsheng, Wang, Caixia, Ma, Chunlan, Li, Xiaoying, and Zhu, Yan. Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film. United States: N. p., 2019. Web. doi:10.1007/S10948-019-5002-Y.
Feng, Yu, Fan, Jiyu, Xie, Yunfei, Hong, Bo, Xu, Jingcai, Tang, Rujun, Zhang, Lei, Ling, Langsheng, Wang, Caixia, Ma, Chunlan, Li, Xiaoying, & Zhu, Yan. Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film. United States. https://doi.org/10.1007/S10948-019-5002-Y
Feng, Yu, Fan, Jiyu, Xie, Yunfei, Hong, Bo, Xu, Jingcai, Tang, Rujun, Zhang, Lei, Ling, Langsheng, Wang, Caixia, Ma, Chunlan, Li, Xiaoying, and Zhu, Yan. 2019. "Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film". United States. https://doi.org/10.1007/S10948-019-5002-Y.
@article{osti_22922932,
title = {Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film},
author = {Feng, Yu and Fan, Jiyu and Xie, Yunfei and Hong, Bo and Xu, Jingcai and Tang, Rujun and Zhang, Lei and Ling, Langsheng and Wang, Caixia and Ma, Chunlan and Li, Xiaoying and Zhu, Yan},
abstractNote = {The structural, Hall effect, electronic transport, and magnetic properties of Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te epitaxial thin film as prepared by pulsed laser deposition technique were reported. X-ray diffraction patterns including linear scans and phi scans confirmed that all films are high quality epitaxy and crystallinity. With the substitution of high valence Bi for Ge element, we found that the previous carriers of hole were changed to electron, which was testified by the negative slopes obtained from the measurements of Hall effect under different temperatures. The electronic transports show a typical semiconductor behavior and can be understood by the small polaron hopping model because the lattice distortions increase the electron-phonon interaction. An obvious ferromagnetic properties occur in the high Bi-doping Ge{sub 0.64}Bi{sub 0.32}Fe{sub 0.04}Te rather than in that with low Bi-doping concentration, indicating that the ferromagnetic establishment is entirely dependent on carrier’s transmissions. The first-principles calculation performed on this system also reveals that the ferromagnetic state exactly exists in the present n-type diluted magnetic semiconductors with Bi co-dopants.},
doi = {10.1007/S10948-019-5002-Y},
url = {https://www.osti.gov/biblio/22922932}, journal = {Journal of Superconductivity and Novel Magnetism},
issn = {1557-1939},
number = 8,
volume = 32,
place = {United States},
year = {Thu Aug 15 00:00:00 EDT 2019},
month = {Thu Aug 15 00:00:00 EDT 2019}
}