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Title: Phase evolution during spark plasma sintering of novel Si3N4-doped TiB2–SiC composite

Abstract

Highlights: • The effect of Si{sub 3}N{sub 4} addition on microstructure of TiB{sub 2}–SiC composite was studied. • Fully dense TiB{sub 2}-based composite was obtained by addition of SiC and Si{sub 3}N{sub 4}. • TiC, B{sub 4}C and SiO{sub 2} were formed in Si{sub 3}N{sub 4}-free and Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC ceramics. • TiN and BN were in-situ formed only in Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC sample. - Abstract: Spark plasma sintering process was employed to fabricate TiB{sub 2}–SiC and novel Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC ceramic composites at 1900 °C for 7 min under 40 MPa. The microstructural development of TiB{sub 2}-based composites was significantly influenced by the addition of SiC as a reinforcement phase and Si{sub 3}N{sub 4} as a sintering aid. Thermodynamic assessment, X-ray diffractometry, scanning electron microscopy and energy dispersive spectroscopy disclosed the in-situ formation of TiC, B{sub 4}C and SiO{sub 2} in both samples as well as TiN and BN in the Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC sample through the chemical reactions of SiC and Si{sub 3}N{sub 4} additives with the surface oxide impurities of TiB{sub 2} particles (TiO{sub 2} and B{sub 2}O{sub 3}). The elimination of harmful oxide layers and the in-situ formationmore » various secondary phases had remarkable influences on the sinterability and final microstructure of TiB{sub 2}.« less

Authors:
; ;
Publication Date:
OSTI Identifier:
22805850
Resource Type:
Journal Article
Journal Name:
Materials Characterization
Additional Journal Information:
Journal Volume: 145; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1044-5803
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON CARBIDES; BORON NITRIDES; BORON OXIDES; DOPED MATERIALS; LAYERS; MICROSTRUCTURE; PRESSURE RANGE MEGA PA 10-100; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; SILICON NITRIDES; SILICON OXIDES; SINTERING; SURFACES; THERMODYNAMICS; TITANIUM BORIDES; TITANIUM CARBIDES; TITANIUM NITRIDES; TITANIUM OXIDES; X-RAY DIFFRACTION

Citation Formats

Dashti Germi, Mohammad, Hamidzadeh Mahaseni, Zahra, Ahmadi, Zohre, and Shahedi Asl, Mehdi, E-mail: shahedi@uma.ac.ir. Phase evolution during spark plasma sintering of novel Si3N4-doped TiB2–SiC composite. United States: N. p., 2018. Web. doi:10.1016/J.MATCHAR.2018.08.043.
Dashti Germi, Mohammad, Hamidzadeh Mahaseni, Zahra, Ahmadi, Zohre, & Shahedi Asl, Mehdi, E-mail: shahedi@uma.ac.ir. Phase evolution during spark plasma sintering of novel Si3N4-doped TiB2–SiC composite. United States. https://doi.org/10.1016/J.MATCHAR.2018.08.043
Dashti Germi, Mohammad, Hamidzadeh Mahaseni, Zahra, Ahmadi, Zohre, and Shahedi Asl, Mehdi, E-mail: shahedi@uma.ac.ir. 2018. "Phase evolution during spark plasma sintering of novel Si3N4-doped TiB2–SiC composite". United States. https://doi.org/10.1016/J.MATCHAR.2018.08.043.
@article{osti_22805850,
title = {Phase evolution during spark plasma sintering of novel Si3N4-doped TiB2–SiC composite},
author = {Dashti Germi, Mohammad and Hamidzadeh Mahaseni, Zahra and Ahmadi, Zohre and Shahedi Asl, Mehdi, E-mail: shahedi@uma.ac.ir},
abstractNote = {Highlights: • The effect of Si{sub 3}N{sub 4} addition on microstructure of TiB{sub 2}–SiC composite was studied. • Fully dense TiB{sub 2}-based composite was obtained by addition of SiC and Si{sub 3}N{sub 4}. • TiC, B{sub 4}C and SiO{sub 2} were formed in Si{sub 3}N{sub 4}-free and Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC ceramics. • TiN and BN were in-situ formed only in Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC sample. - Abstract: Spark plasma sintering process was employed to fabricate TiB{sub 2}–SiC and novel Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC ceramic composites at 1900 °C for 7 min under 40 MPa. The microstructural development of TiB{sub 2}-based composites was significantly influenced by the addition of SiC as a reinforcement phase and Si{sub 3}N{sub 4} as a sintering aid. Thermodynamic assessment, X-ray diffractometry, scanning electron microscopy and energy dispersive spectroscopy disclosed the in-situ formation of TiC, B{sub 4}C and SiO{sub 2} in both samples as well as TiN and BN in the Si{sub 3}N{sub 4}-doped TiB{sub 2}–SiC sample through the chemical reactions of SiC and Si{sub 3}N{sub 4} additives with the surface oxide impurities of TiB{sub 2} particles (TiO{sub 2} and B{sub 2}O{sub 3}). The elimination of harmful oxide layers and the in-situ formation various secondary phases had remarkable influences on the sinterability and final microstructure of TiB{sub 2}.},
doi = {10.1016/J.MATCHAR.2018.08.043},
url = {https://www.osti.gov/biblio/22805850}, journal = {Materials Characterization},
issn = {1044-5803},
number = ,
volume = 145,
place = {United States},
year = {2018},
month = {11}
}