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Title: Enhanced temperature-stable dielectric properties in oxygen annealed 0.85(K0.5Na0.5)NbO3-0.15SrZrO3 ceramic

Journal Article · · Materials Research Bulletin
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  1. Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, College of Materials Science and Engineering, College of Mechanical and Control Engineering, Guilin University of Technology, Guilin 541004 (China)
  2. Laboratory of Chemical Analysis Elaboration and Materials, Engineering (LEACIM), Université de La Rochelle, Avenue Michel Crépeau, 17042 La Rochelle Cedex 01 (France)
  3. School of Physical Science & Technology and Guangxi Key Laboratory for Relativistic Astrophysics, Guangxi University, Nanning 530004 (China)

Highlights: • Prepared O{sub 2}-annealed KNN-15SZ could meet the EIA X8R specification. • Oxygen annealing resulted in different variation of T{sub m} of cores and shells. • Variation of T{sub m} related to decrease of oxygen vacancies and diffusion of KNN. • Enhanced dielectric temperature stability attributed to change of PNRs size. - Abstract: The structure, morphology and dielectric properties of the oxygen annealed (O{sub 2}-annealed) and untreated (as-prepared) 0.85(K{sub 0.5}Na{sub 0.5}) NbO{sub 3}-0·15SrZrO{sub 3} (KNN-15SZ) ceramics were investigated. The temperature dependence of dielectric permittivity shows two diffuse dielectric peaks associated with duplex core-shell structure, leading to relatively stable dielectric permittivity in a wide temperature range. Interestingly, the O{sub 2}-annealed sample with the operating temperature range of −104 °C–157 °C could meet the EIA X8R specification, which is superior to the as-prepared one (−98 °C–130 °C) for the EIA X7R specification. Furthermore, the dielectric contribution from cores and shells of both samples was divided by the Lorentz fitting. The relation between relaxation frequency and temperature of both samples obeyed the Vogel-Fulcher law. This finding could pave a possible way to modify dielectric temperature stability for multilayer ceramic chip capacitors applications.

OSTI ID:
22805470
Journal Information:
Materials Research Bulletin, Vol. 99; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English