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Title: Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors

Abstract

Highlights: • A dual-wavelength UV photodetector has been constructed with a sandwich structure. • The ratio of the two response peaks can be changed by changing the bias voltage. • The principle was investigated by interpretation of the depletion widths. - Abstract: In this work, dual-wavelength UV photodetectors were successfully constructed by growing ZnO and MgZnO layers on SiO{sub 2} substrates with ZnO/Au/MgZnO structure. The photodetectors exhibited high performance and the influence of different thickness of MgZnO layers was investigated. Moreover, simply by adjusting the applied voltage on the devices, the ratio of the two response peaks (caused by MgZnO and ZnO layers) changed therewith. The detecting properties may originate from the two layers having different increasing rates where the existence of Schottky junctions plays an important role. The photodetectors are meaningful for fabricating dual-wavelength optoelectronic devices for practical applications.

Authors:
;  [1];  [2]; ; ;  [1]; ; ; ;  [1]
  1. School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022 (China)
  2. School of Photo-electronic Engineering, Changchun University of Science and Technology, Changchun 130022 (China)
Publication Date:
OSTI Identifier:
22804068
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 103; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; MAGNESIUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY EFFECT; SEMICONDUCTOR JUNCTIONS; SILICON OXIDES; ULTRAVIOLET RADIATION; WAVELENGTHS; ZINC OXIDES

Citation Formats

Hu, Nan, Jiang, Dayong, Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, Zhang, Guoyu, Guo, Zexuan, Zhang, Wei, Yang, Xiaojiang, Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, Gao, Shang, Zheng, Tao, Liang, Qingcheng, and Hou, Jianhua. Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors. United States: N. p., 2018. Web. doi:10.1016/J.MATERRESBULL.2018.03.054.
Hu, Nan, Jiang, Dayong, Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, Zhang, Guoyu, Guo, Zexuan, Zhang, Wei, Yang, Xiaojiang, Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, Gao, Shang, Zheng, Tao, Liang, Qingcheng, & Hou, Jianhua. Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors. United States. https://doi.org/10.1016/J.MATERRESBULL.2018.03.054
Hu, Nan, Jiang, Dayong, Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, Zhang, Guoyu, Guo, Zexuan, Zhang, Wei, Yang, Xiaojiang, Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, Gao, Shang, Zheng, Tao, Liang, Qingcheng, and Hou, Jianhua. Sun . "Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors". United States. https://doi.org/10.1016/J.MATERRESBULL.2018.03.054.
@article{osti_22804068,
title = {Voltage controlled dual-wavelength ZnO/Au/MgZnO UV photodetectors},
author = {Hu, Nan and Jiang, Dayong and Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022 and Zhang, Guoyu and Guo, Zexuan and Zhang, Wei and Yang, Xiaojiang and Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022 and Gao, Shang and Zheng, Tao and Liang, Qingcheng and Hou, Jianhua},
abstractNote = {Highlights: • A dual-wavelength UV photodetector has been constructed with a sandwich structure. • The ratio of the two response peaks can be changed by changing the bias voltage. • The principle was investigated by interpretation of the depletion widths. - Abstract: In this work, dual-wavelength UV photodetectors were successfully constructed by growing ZnO and MgZnO layers on SiO{sub 2} substrates with ZnO/Au/MgZnO structure. The photodetectors exhibited high performance and the influence of different thickness of MgZnO layers was investigated. Moreover, simply by adjusting the applied voltage on the devices, the ratio of the two response peaks (caused by MgZnO and ZnO layers) changed therewith. The detecting properties may originate from the two layers having different increasing rates where the existence of Schottky junctions plays an important role. The photodetectors are meaningful for fabricating dual-wavelength optoelectronic devices for practical applications.},
doi = {10.1016/J.MATERRESBULL.2018.03.054},
url = {https://www.osti.gov/biblio/22804068}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 103,
place = {United States},
year = {2018},
month = {7}
}