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Title: The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities

Abstract

The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties for spintronics applications. We have used the full-potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structures and magnetic properties of Al{sub 1−x}TM{sub x}As at low concentration x = 0.0625 of transition metal (TM = V, Cr, and Mn) atoms. We have found that the majority-spin states of Al{sub 0.9375}TM{sub 0.0625}As compounds are metallic due to large p-d hybridization between 3d levels of TM and the 4p levels of As around Fermi level, whereas the minority-spin states have semiconductor character. These compounds exhibit a half-metallic behavior with spin polarization of 100%, where the ferromagnetism is originated from double-exchange mechanism. Therefore, Al{sub 0.9375}TM{sub 0.0625}As (TM = V, Cr, and Mn) materials seem to be good candidates for spin injection in the field of spintronics applications.

Authors:
 [1];  [2];  [3];  [4];  [1]
  1. Djillali Liabes University of Sidi Bel-Abbes, Modelling and Simulation in Materials Science Laboratory, Physics Department (Algeria)
  2. Dr. Tahar Moulay University of Saïda, Department of Physics, Faculty of Sciences (Algeria)
  3. Centre Universitaire Nour Bachir El Bayadh (Algeria)
  4. Université d’Artois, Unité de Catalyse et Chimie du Solide (UCCS), UMR CNRS 8181, Faculté des Sciences (France)
Publication Date:
OSTI Identifier:
22773977
Resource Type:
Journal Article
Journal Name:
Journal of Superconductivity and Novel Magnetism
Additional Journal Information:
Journal Volume: 31; Journal Issue: 7; Other Information: Copyright (c) 2018 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1557-1939
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; CHROMIUM; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRONIC STRUCTURE; FERMI LEVEL; FERROMAGNETISM; IMPURITIES; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MANGANESE; SPIN; SPIN ORIENTATION; VANADIUM; WAVE PROPAGATION

Citation Formats

Boutaleb, Miloud, Doumi, Bendouma, Mokaddem, Allel, Sayede, Adlane, and Tadjer, Abdelkader. The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities. United States: N. p., 2018. Web. doi:10.1007/S10948-017-4461-2.
Boutaleb, Miloud, Doumi, Bendouma, Mokaddem, Allel, Sayede, Adlane, & Tadjer, Abdelkader. The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities. United States. doi:10.1007/S10948-017-4461-2.
Boutaleb, Miloud, Doumi, Bendouma, Mokaddem, Allel, Sayede, Adlane, and Tadjer, Abdelkader. Sun . "The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities". United States. doi:10.1007/S10948-017-4461-2.
@article{osti_22773977,
title = {The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities},
author = {Boutaleb, Miloud and Doumi, Bendouma and Mokaddem, Allel and Sayede, Adlane and Tadjer, Abdelkader},
abstractNote = {The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties for spintronics applications. We have used the full-potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structures and magnetic properties of Al{sub 1−x}TM{sub x}As at low concentration x = 0.0625 of transition metal (TM = V, Cr, and Mn) atoms. We have found that the majority-spin states of Al{sub 0.9375}TM{sub 0.0625}As compounds are metallic due to large p-d hybridization between 3d levels of TM and the 4p levels of As around Fermi level, whereas the minority-spin states have semiconductor character. These compounds exhibit a half-metallic behavior with spin polarization of 100%, where the ferromagnetism is originated from double-exchange mechanism. Therefore, Al{sub 0.9375}TM{sub 0.0625}As (TM = V, Cr, and Mn) materials seem to be good candidates for spin injection in the field of spintronics applications.},
doi = {10.1007/S10948-017-4461-2},
journal = {Journal of Superconductivity and Novel Magnetism},
issn = {1557-1939},
number = 7,
volume = 31,
place = {United States},
year = {2018},
month = {7}
}