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Title: Investigation of Substitution of Cu and Se Atoms on the Electronic and Magnetic Properties of GaN Monolayer Nanosheet

Abstract

In this paper, some of the electronic properties of GaN monolayer nanosheet are investigated in its pure form and after substitution of Cu and Se atoms. Electronic properties have been calculated based on the density functional theory approach with full-potential linearized augmented plane wave method. The results show that GaN nanosheet is a nonmagnetic semiconductor and its energy gap is equal to 2.202 eV. Our results show that GaN nanosheet properties vary with substitution of Cu or Se atoms: GaSeN and GaCuN show half-metallic and metallic behaviors, respectively. Calculated magnetic moments for GaSeN and GaCuN are 1.00 and 1.127 µ{sub B}, respectively.

Authors:
; ;  [1]
  1. Islamic Azad University, Department of Physics, Mashhad Branch (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22773962
Resource Type:
Journal Article
Journal Name:
Journal of Superconductivity and Novel Magnetism
Additional Journal Information:
Journal Volume: 31; Journal Issue: 7; Other Information: Copyright (c) 2018 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1557-1939
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER; DENSITY FUNCTIONAL METHOD; ELECTRICAL PROPERTIES; ENERGY GAP; GALLIUM NITRIDES; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; NANOSTRUCTURES; POTENTIALS; SELENIUM; WAVE PROPAGATION

Citation Formats

Bakhshayeshi, Ali, Taghavi Mendi, Rouhollah, and Ghafoorian, Fatemeh. Investigation of Substitution of Cu and Se Atoms on the Electronic and Magnetic Properties of GaN Monolayer Nanosheet. United States: N. p., 2018. Web. doi:10.1007/S10948-017-4492-8.
Bakhshayeshi, Ali, Taghavi Mendi, Rouhollah, & Ghafoorian, Fatemeh. Investigation of Substitution of Cu and Se Atoms on the Electronic and Magnetic Properties of GaN Monolayer Nanosheet. United States. doi:10.1007/S10948-017-4492-8.
Bakhshayeshi, Ali, Taghavi Mendi, Rouhollah, and Ghafoorian, Fatemeh. Sun . "Investigation of Substitution of Cu and Se Atoms on the Electronic and Magnetic Properties of GaN Monolayer Nanosheet". United States. doi:10.1007/S10948-017-4492-8.
@article{osti_22773962,
title = {Investigation of Substitution of Cu and Se Atoms on the Electronic and Magnetic Properties of GaN Monolayer Nanosheet},
author = {Bakhshayeshi, Ali and Taghavi Mendi, Rouhollah and Ghafoorian, Fatemeh},
abstractNote = {In this paper, some of the electronic properties of GaN monolayer nanosheet are investigated in its pure form and after substitution of Cu and Se atoms. Electronic properties have been calculated based on the density functional theory approach with full-potential linearized augmented plane wave method. The results show that GaN nanosheet is a nonmagnetic semiconductor and its energy gap is equal to 2.202 eV. Our results show that GaN nanosheet properties vary with substitution of Cu or Se atoms: GaSeN and GaCuN show half-metallic and metallic behaviors, respectively. Calculated magnetic moments for GaSeN and GaCuN are 1.00 and 1.127 µ{sub B}, respectively.},
doi = {10.1007/S10948-017-4492-8},
journal = {Journal of Superconductivity and Novel Magnetism},
issn = {1557-1939},
number = 7,
volume = 31,
place = {United States},
year = {2018},
month = {7}
}