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Title: IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

Abstract

Using infrared (IR) spectroscopy and spectral ellipsometry, we experimentally confirmed the previously predicted mechanochemical effect of the stoichiometric composition disorder leading to the formation of carbon-vacancy structures in silicon carbide (SiC) films grown on silicon substrates by the atom substitution method. It was found that a band at 960 cm{sup –1} in the IR spectra of SiC films on silicon, corresponding to “carbon-vacancy clusters” is always present in SiC films grown under pure carbon monoxide (CO) or in a mixture of CO with silane (SiH{sub 4}) on Si substrates of different orientation and doping level and type. There is no absorption band in the region of 960 cm–1 in the IR spectra of SiC films synthesized at the optimum ratio of the CO and trichlorosilane (SiHCl{sub 3}) gas pressures. The previously predicted mechanism of the chemical reaction of substitution of Si atoms for carbon by the interaction of gases CO and SiHCl{sub 3} on the surface of the silicon substrate, which leads to the formation of epitaxial layers of single-crystal SiC, is experimentally confirmed.

Authors:
 [1];  [2];  [1]
  1. Ioffe Institute (Russian Federation)
  2. Russian Academy of Sciences, Institute of Problems of Mechanical Engineering (Russian Federation)
Publication Date:
OSTI Identifier:
22771664
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 59; Journal Issue: 12; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CARBON; CARBON MONOXIDE; CHEMICAL REACTIONS; ELLIPSOMETRY; EPITAXY; FILMS; INFRARED SPECTRA; INTERACTIONS; LAYERS; MONOCRYSTALS; SILANES; SILICON; SILICON CARBIDES; STOICHIOMETRY; SUBSTRATES; SURFACES; TRANSFORMATIONS; VACANCIES

Citation Formats

Grudinkin, S. A., Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com, Osipov, A. V., and Feoktistov, N. A. IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. United States: N. p., 2017. Web. doi:10.1134/S1063783417120186.
Grudinkin, S. A., Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com, Osipov, A. V., & Feoktistov, N. A. IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide. United States. https://doi.org/10.1134/S1063783417120186
Grudinkin, S. A., Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com, Osipov, A. V., and Feoktistov, N. A. 2017. "IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide". United States. https://doi.org/10.1134/S1063783417120186.
@article{osti_22771664,
title = {IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide},
author = {Grudinkin, S. A. and Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com and Osipov, A. V. and Feoktistov, N. A.},
abstractNote = {Using infrared (IR) spectroscopy and spectral ellipsometry, we experimentally confirmed the previously predicted mechanochemical effect of the stoichiometric composition disorder leading to the formation of carbon-vacancy structures in silicon carbide (SiC) films grown on silicon substrates by the atom substitution method. It was found that a band at 960 cm{sup –1} in the IR spectra of SiC films on silicon, corresponding to “carbon-vacancy clusters” is always present in SiC films grown under pure carbon monoxide (CO) or in a mixture of CO with silane (SiH{sub 4}) on Si substrates of different orientation and doping level and type. There is no absorption band in the region of 960 cm–1 in the IR spectra of SiC films synthesized at the optimum ratio of the CO and trichlorosilane (SiHCl{sub 3}) gas pressures. The previously predicted mechanism of the chemical reaction of substitution of Si atoms for carbon by the interaction of gases CO and SiHCl{sub 3} on the surface of the silicon substrate, which leads to the formation of epitaxial layers of single-crystal SiC, is experimentally confirmed.},
doi = {10.1134/S1063783417120186},
url = {https://www.osti.gov/biblio/22771664}, journal = {Physics of the Solid State},
issn = {1063-7834},
number = 12,
volume = 59,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2017},
month = {Fri Dec 15 00:00:00 EST 2017}
}