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Title: Modification of the properties of ferromagnetic layers based on A{sup 3}B{sup 5} compounds by pulsed laser annealing

Abstract

Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A{sup 3}B{sup 5}: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of >230 mJ/cm{sup 2}, the hole concentration in GaAs: Mn layers increases to 3 × 10{sup 20} cm{sup –3}. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.

Authors:
; ; ; ; ; ;  [1];  [2]; ; ;  [1]
  1. Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)
  2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22771544
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 59; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CONCENTRATION RATIO; GALLIUM ARSENIDES; HALL EFFECT; HOLES; HYSTERESIS; INDIUM ARSENIDES; KRYPTON FLUORIDE LASERS; LASER RADIATION; LAYERS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; MODIFICATIONS; PULSES; SEMICONDUCTOR MATERIALS; WAVELENGTHS

Citation Formats

Vikhrova, O. V., Danilov, Yu. A., E-mail: danilov@nifti.unn.ru, Zvonkov, B. N., Zdoroveishchev, A. V., Kudrin, A. V., Lesnikov, V. P., Nezhdanov, A. V., Pavlov, S. A., Paraffin, A. E., Pashenkin, I. Yu., and Plankina, S. M.. Modification of the properties of ferromagnetic layers based on A{sup 3}B{sup 5} compounds by pulsed laser annealing. United States: N. p., 2017. Web. doi:10.1134/S1063783417110324.
Vikhrova, O. V., Danilov, Yu. A., E-mail: danilov@nifti.unn.ru, Zvonkov, B. N., Zdoroveishchev, A. V., Kudrin, A. V., Lesnikov, V. P., Nezhdanov, A. V., Pavlov, S. A., Paraffin, A. E., Pashenkin, I. Yu., & Plankina, S. M.. Modification of the properties of ferromagnetic layers based on A{sup 3}B{sup 5} compounds by pulsed laser annealing. United States. doi:10.1134/S1063783417110324.
Vikhrova, O. V., Danilov, Yu. A., E-mail: danilov@nifti.unn.ru, Zvonkov, B. N., Zdoroveishchev, A. V., Kudrin, A. V., Lesnikov, V. P., Nezhdanov, A. V., Pavlov, S. A., Paraffin, A. E., Pashenkin, I. Yu., and Plankina, S. M.. Wed . "Modification of the properties of ferromagnetic layers based on A{sup 3}B{sup 5} compounds by pulsed laser annealing". United States. doi:10.1134/S1063783417110324.
@article{osti_22771544,
title = {Modification of the properties of ferromagnetic layers based on A{sup 3}B{sup 5} compounds by pulsed laser annealing},
author = {Vikhrova, O. V. and Danilov, Yu. A., E-mail: danilov@nifti.unn.ru and Zvonkov, B. N. and Zdoroveishchev, A. V. and Kudrin, A. V. and Lesnikov, V. P. and Nezhdanov, A. V. and Pavlov, S. A. and Paraffin, A. E. and Pashenkin, I. Yu. and Plankina, S. M.},
abstractNote = {Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A{sup 3}B{sup 5}: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of >230 mJ/cm{sup 2}, the hole concentration in GaAs: Mn layers increases to 3 × 10{sup 20} cm{sup –3}. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.},
doi = {10.1134/S1063783417110324},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 11,
volume = 59,
place = {United States},
year = {2017},
month = {11}
}