skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells

Abstract

The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.

Authors:
; ; ;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. Paul-Drude-Institut für Festkörperelektronik (Germany)
Publication Date:
OSTI Identifier:
22771525
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 59; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ARSENIC COMPOUNDS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; HOLES; IMPURITIES; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WELLS; SIMULATION; SPIN ORIENTATION

Citation Formats

Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru, Sapega, V. F., Averkiev, N. S., Panaiotti, I. E., and Ploog, K. H. Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells. United States: N. p., 2017. Web. doi:10.1134/S1063783417110063.
Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru, Sapega, V. F., Averkiev, N. S., Panaiotti, I. E., & Ploog, K. H. Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells. United States. doi:10.1134/S1063783417110063.
Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru, Sapega, V. F., Averkiev, N. S., Panaiotti, I. E., and Ploog, K. H. Wed . "Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells". United States. doi:10.1134/S1063783417110063.
@article{osti_22771525,
title = {Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells},
author = {Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru and Sapega, V. F. and Averkiev, N. S. and Panaiotti, I. E. and Ploog, K. H.},
abstractNote = {The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.},
doi = {10.1134/S1063783417110063},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 11,
volume = 59,
place = {United States},
year = {2017},
month = {11}
}