skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS{sub 2}

Abstract

Magnetic properties of Mg-doped WS{sub 2} monolayer under strain are investigated by ab initio methods. Without strain, the Mg-doped WS{sub 2} monolayer is a magnetic nano material and the total magnetic moment is about 1.68 μ{sub B}. We applied strain to Mg-doped WS{sub 2} monolayer from −10 to 10%. The system changes from semiconductor to half-metallic material from 3 to 10% strain. The magnetic moment gets a maximum value of 2.07 μ{sub B} at −3% compressive strain. However, the magnetic moment of system decreases to zero sharply when compressive strain arrived at −5%. The coupling among the 3s states of Mg, 5d states of W, and 3p states of S is responsible for the strong strain effect on the magnetic properties. Our studies predict Mg-doped WS{sub 2} monolayer under strain to be candidates for application in spintronics.

Authors:
 [1]; ;  [2]
  1. Shanghai Polytechnic University, Department of Physics (China)
  2. Nantong University, School of Electronics and Information (China)
Publication Date:
OSTI Identifier:
22771295
Resource Type:
Journal Article
Journal Name:
Journal of Superconductivity and Novel Magnetism
Additional Journal Information:
Journal Volume: 31; Journal Issue: 5; Other Information: Copyright (c) 2018 Springer Science+Business Media, LLC, part of Springer Nature; Article Copyright (c) 2017 Springer Science+Business Media, LLC; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1557-1939
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; D STATES; DOPED MATERIALS; LAYERS; MAGNESIUM; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; P STATES; S STATES; SEMICONDUCTOR MATERIALS; STRAINS; TUNGSTEN SULFIDES

Citation Formats

Luo, M., E-mail: luomin@sspu.edu.cn, Yin, H. H., and Chu, J. H. Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS{sub 2}. United States: N. p., 2018. Web. doi:10.1007/S10948-017-4380-2.
Luo, M., E-mail: luomin@sspu.edu.cn, Yin, H. H., & Chu, J. H. Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS{sub 2}. United States. doi:10.1007/S10948-017-4380-2.
Luo, M., E-mail: luomin@sspu.edu.cn, Yin, H. H., and Chu, J. H. Tue . "Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS{sub 2}". United States. doi:10.1007/S10948-017-4380-2.
@article{osti_22771295,
title = {Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS{sub 2}},
author = {Luo, M., E-mail: luomin@sspu.edu.cn and Yin, H. H. and Chu, J. H.},
abstractNote = {Magnetic properties of Mg-doped WS{sub 2} monolayer under strain are investigated by ab initio methods. Without strain, the Mg-doped WS{sub 2} monolayer is a magnetic nano material and the total magnetic moment is about 1.68 μ{sub B}. We applied strain to Mg-doped WS{sub 2} monolayer from −10 to 10%. The system changes from semiconductor to half-metallic material from 3 to 10% strain. The magnetic moment gets a maximum value of 2.07 μ{sub B} at −3% compressive strain. However, the magnetic moment of system decreases to zero sharply when compressive strain arrived at −5%. The coupling among the 3s states of Mg, 5d states of W, and 3p states of S is responsible for the strong strain effect on the magnetic properties. Our studies predict Mg-doped WS{sub 2} monolayer under strain to be candidates for application in spintronics.},
doi = {10.1007/S10948-017-4380-2},
journal = {Journal of Superconductivity and Novel Magnetism},
issn = {1557-1939},
number = 5,
volume = 31,
place = {United States},
year = {2018},
month = {5}
}