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Title: Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies

Abstract

Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. Structural models of the acceptors with shallow and deep levels are considered. In addition to the data obtained earlier, studies using high-frequency magnetic resonance were obtained, which allowed revealing orthorhombic deviations from the axial symmetry for the deep acceptors; theoretical analysis explains experimentally found shifts of g factors for the deep acceptors arising due to the orthorhombic deviations, which appear probably due to the Jahn–Teller effect.

Authors:
; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22771250
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 4; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM ADDITIONS; AXIAL SYMMETRY; BORON ADDITIONS; CRYSTALS; DOUBLE RESONANCE METHODS; ELECTRON SPIN RESONANCE; ELECTRONS; ENDOR; GALLIUM COMPOUNDS; JAHN-TELLER EFFECT; LANDE FACTOR; ORTHORHOMBIC LATTICES; SILICON CARBIDES; STRUCTURAL MODELS

Citation Formats

Il’in, I. V., Uspenskaya, Yu. A., Kramushchenko, D. D., Muzafarova, M. V., Soltamov, V. A., Mokhov, E. N., and Baranov, P. G., E-mail: pavel.baranov@mail.ioffe.ru. Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies. United States: N. p., 2018. Web. doi:10.1134/S1063783418040121.
Il’in, I. V., Uspenskaya, Yu. A., Kramushchenko, D. D., Muzafarova, M. V., Soltamov, V. A., Mokhov, E. N., & Baranov, P. G., E-mail: pavel.baranov@mail.ioffe.ru. Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies. United States. doi:10.1134/S1063783418040121.
Il’in, I. V., Uspenskaya, Yu. A., Kramushchenko, D. D., Muzafarova, M. V., Soltamov, V. A., Mokhov, E. N., and Baranov, P. G., E-mail: pavel.baranov@mail.ioffe.ru. Sun . "Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies". United States. doi:10.1134/S1063783418040121.
@article{osti_22771250,
title = {Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies},
author = {Il’in, I. V. and Uspenskaya, Yu. A. and Kramushchenko, D. D. and Muzafarova, M. V. and Soltamov, V. A. and Mokhov, E. N. and Baranov, P. G., E-mail: pavel.baranov@mail.ioffe.ru},
abstractNote = {Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. Structural models of the acceptors with shallow and deep levels are considered. In addition to the data obtained earlier, studies using high-frequency magnetic resonance were obtained, which allowed revealing orthorhombic deviations from the axial symmetry for the deep acceptors; theoretical analysis explains experimentally found shifts of g factors for the deep acceptors arising due to the orthorhombic deviations, which appear probably due to the Jahn–Teller effect.},
doi = {10.1134/S1063783418040121},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 4,
volume = 60,
place = {United States},
year = {2018},
month = {4}
}