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Title: Study of the Anisotropic Elastoplastic Properties of β-Ga{sub 2}O{sub 3} Films Synthesized on SiC/Si Substrates

Abstract

The structural and mechanical properties of gallium oxide films grown on silicon crystallographic planes (001), (011), and (111) with a buffer layer of silicon carbide are investigated. Nanoindentation was used to study the elastoplastic properties of gallium oxide and also to determine the elastic recovery parameter of the films under study. The tensile strength, hardness, elasticity tensor, compliance tensor, Young’s modulus, Poisson’s ratio, and other characteristics of gallium oxide were calculated using quantum chemistry methods. It was found that the gallium oxide crystal is auxetic because, for some stretching directions, the Poisson’s ratio takes on negative values. The calculated values correspond quantitatively to the experimental data. It is concluded that the elastoplastic properties of gallium oxide films approximately correspond to the properties of bulk crystals and that a change in the orientation of the silicon surface leads to a significant change in the orientation of gallium oxide.

Authors:
;  [1];  [2]; ;  [1];  [3]
  1. Russian Academy of Sciences, Institute of Problems of Mechanical Engineering (Russian Federation)
  2. OOO Sovershennye Kristally (Russian Federation)
  3. Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)
Publication Date:
OSTI Identifier:
22771129
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; APPROXIMATIONS; CRYSTALLOGRAPHY; CRYSTALS; ELASTICITY; FILMS; GALLIUM OXIDES; HARDNESS; LAYERS; ORIENTATION; SILICON; SILICON CARBIDES; SUBSTRATES; SURFACES; TENSILE PROPERTIES

Citation Formats

Grashchenko, A. S., Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com, Nikolaev, V. I., Osipov, A. V., Osipova, E. V., and Soshnikov, I. P. Study of the Anisotropic Elastoplastic Properties of β-Ga{sub 2}O{sub 3} Films Synthesized on SiC/Si Substrates. United States: N. p., 2018. Web. doi:10.1134/S1063783418050104.
Grashchenko, A. S., Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com, Nikolaev, V. I., Osipov, A. V., Osipova, E. V., & Soshnikov, I. P. Study of the Anisotropic Elastoplastic Properties of β-Ga{sub 2}O{sub 3} Films Synthesized on SiC/Si Substrates. United States. doi:10.1134/S1063783418050104.
Grashchenko, A. S., Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com, Nikolaev, V. I., Osipov, A. V., Osipova, E. V., and Soshnikov, I. P. Tue . "Study of the Anisotropic Elastoplastic Properties of β-Ga{sub 2}O{sub 3} Films Synthesized on SiC/Si Substrates". United States. doi:10.1134/S1063783418050104.
@article{osti_22771129,
title = {Study of the Anisotropic Elastoplastic Properties of β-Ga{sub 2}O{sub 3} Films Synthesized on SiC/Si Substrates},
author = {Grashchenko, A. S. and Kukushkin, S. A., E-mail: sergey.a.kukushkin@gmail.com and Nikolaev, V. I. and Osipov, A. V. and Osipova, E. V. and Soshnikov, I. P.},
abstractNote = {The structural and mechanical properties of gallium oxide films grown on silicon crystallographic planes (001), (011), and (111) with a buffer layer of silicon carbide are investigated. Nanoindentation was used to study the elastoplastic properties of gallium oxide and also to determine the elastic recovery parameter of the films under study. The tensile strength, hardness, elasticity tensor, compliance tensor, Young’s modulus, Poisson’s ratio, and other characteristics of gallium oxide were calculated using quantum chemistry methods. It was found that the gallium oxide crystal is auxetic because, for some stretching directions, the Poisson’s ratio takes on negative values. The calculated values correspond quantitatively to the experimental data. It is concluded that the elastoplastic properties of gallium oxide films approximately correspond to the properties of bulk crystals and that a change in the orientation of the silicon surface leads to a significant change in the orientation of gallium oxide.},
doi = {10.1134/S1063783418050104},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 5,
volume = 60,
place = {United States},
year = {2018},
month = {5}
}