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Title: Frequency Dependence of the Dielectric Loss Angle in Disordered Semiconductors in the Terahertz Frequency Range

Abstract

Frequency dependence of the real part of the conductivity σ{sub 1}(ω) in the region of the transition from almost linear (s < 1) to quadratic (s ≈ 2) can indicate a change in the conduction mechanism (the transition from the variable-range to the fixed-range hopping with increasing frequency); in this case, the sharpness of the change in the slope of the frequency characteristic is related to the dependence of the preexponential factor of the resonance integral on the intercenter distance in the pair. The frequency dependence of the imaginary part of the conductivity σ{sub 2}(ω) has no kink in the vicinity of the transition frequency ωcr, remaining almost linear. A large dielectric loss angle |cotγ| = |σ{sub 2}|/σ{sub 1} can indicate that the imaginary part of the conductivity at ω < ω{sub cr} is defined by the larger zero-phonon contribution in σ{sub 2}{sup res} the region of weak variation in the loss angle γ(ω), which significantly exceeds the relaxation contribution σ{sub 2}{sup res}.

Authors:
;  [1]
  1. Moscow State University (Russian Federation)
Publication Date:
OSTI Identifier:
22771124
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIELECTRIC MATERIALS; FREQUENCY DEPENDENCE; LOSSES; PHONONS; RELAXATION; RESONANCE INTEGRALS; SEMICONDUCTOR MATERIALS; THZ RANGE

Citation Formats

Ormont, M. A., E-mail: ormont@phys.msu.ru, and Zvyagin, I. P. Frequency Dependence of the Dielectric Loss Angle in Disordered Semiconductors in the Terahertz Frequency Range. United States: N. p., 2018. Web. doi:10.1134/S1063783418050232.
Ormont, M. A., E-mail: ormont@phys.msu.ru, & Zvyagin, I. P. Frequency Dependence of the Dielectric Loss Angle in Disordered Semiconductors in the Terahertz Frequency Range. United States. doi:10.1134/S1063783418050232.
Ormont, M. A., E-mail: ormont@phys.msu.ru, and Zvyagin, I. P. Tue . "Frequency Dependence of the Dielectric Loss Angle in Disordered Semiconductors in the Terahertz Frequency Range". United States. doi:10.1134/S1063783418050232.
@article{osti_22771124,
title = {Frequency Dependence of the Dielectric Loss Angle in Disordered Semiconductors in the Terahertz Frequency Range},
author = {Ormont, M. A., E-mail: ormont@phys.msu.ru and Zvyagin, I. P.},
abstractNote = {Frequency dependence of the real part of the conductivity σ{sub 1}(ω) in the region of the transition from almost linear (s < 1) to quadratic (s ≈ 2) can indicate a change in the conduction mechanism (the transition from the variable-range to the fixed-range hopping with increasing frequency); in this case, the sharpness of the change in the slope of the frequency characteristic is related to the dependence of the preexponential factor of the resonance integral on the intercenter distance in the pair. The frequency dependence of the imaginary part of the conductivity σ{sub 2}(ω) has no kink in the vicinity of the transition frequency ωcr, remaining almost linear. A large dielectric loss angle |cotγ| = |σ{sub 2}|/σ{sub 1} can indicate that the imaginary part of the conductivity at ω < ω{sub cr} is defined by the larger zero-phonon contribution in σ{sub 2}{sup res} the region of weak variation in the loss angle γ(ω), which significantly exceeds the relaxation contribution σ{sub 2}{sup res}.},
doi = {10.1134/S1063783418050232},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 5,
volume = 60,
place = {United States},
year = {2018},
month = {5}
}