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Title: The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures

Abstract

The effect of bismuth on the structural perfection and the luminescent properties of Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.

Authors:
; ;  [1];  [2]
  1. Russian Academy of Sciences, Southern Scientific Center (Russian Federation)
  2. Platov State Polytechnic University (Russian Federation)
Publication Date:
OSTI Identifier:
22771092
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 7; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ANTIMONY COMPOUNDS; BISMUTH; BISMUTH COMPOUNDS; CONCENTRATION RATIO; CRYSTAL STRUCTURE; ELASTICITY; EPITAXY; GALLIUM ANTIMONIDES; GALLIUM COMPOUNDS; LAYERS; LIQUIDS; LUMINESCENCE; RECRYSTALLIZATION; ROUGHNESS; STRESSES; TEMPERATURE GRADIENTS; TEMPERATURE RANGE 0400-1000 K; THICKNESS; THIN FILMS

Citation Formats

Alfimova, D. L., Lunina, M. L., Lunin, L. S., E-mail: lunin-ls@mail.ru, Pashchenko, A. S., and Kazakova, A. E. The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures. United States: N. p., 2018. Web. doi:10.1134/S1063783418070028.
Alfimova, D. L., Lunina, M. L., Lunin, L. S., E-mail: lunin-ls@mail.ru, Pashchenko, A. S., & Kazakova, A. E. The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures. United States. https://doi.org/10.1134/S1063783418070028
Alfimova, D. L., Lunina, M. L., Lunin, L. S., E-mail: lunin-ls@mail.ru, Pashchenko, A. S., and Kazakova, A. E. 2018. "The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures". United States. https://doi.org/10.1134/S1063783418070028.
@article{osti_22771092,
title = {The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb Heterostructures},
author = {Alfimova, D. L. and Lunina, M. L. and Lunin, L. S., E-mail: lunin-ls@mail.ru and Pashchenko, A. S. and Kazakova, A. E.},
abstractNote = {The effect of bismuth on the structural perfection and the luminescent properties of Al{sub x}In{sub y}Ga{sub 1–x–y}Bi{sub z}Sb{sub 1–z}/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.},
doi = {10.1134/S1063783418070028},
url = {https://www.osti.gov/biblio/22771092}, journal = {Physics of the Solid State},
issn = {1063-7834},
number = 7,
volume = 60,
place = {United States},
year = {Sun Jul 15 00:00:00 EDT 2018},
month = {Sun Jul 15 00:00:00 EDT 2018}
}