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Title: Comparative Study of the Lateral Photovoltaic Effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si Structures

Abstract

The results of a comparative study of the lateral photovoltaic effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si structures are presented. The lateral photovoltage reaches its maximum near the measurement contacts in both structures, but the signs of this voltage differ. As the light spot moves away from the contacts, the photovoltage varies linearly in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and decreases exponentially in Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si. It is found that interface states at the SiO{sub 2}/Si interface induce the photovoltage polarity inversion associated with a change in the conductivity type of silicon. An extreme thickness dependence of the photovoltage with an optimum Fe{sub 3}O{sub 4} film thickness of ~50 nm is observed in both structures.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Automation and Control Processes, Far Eastern Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22771087
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 7; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FILMS; INTERFACES; IRON OXIDES; PHOTOVOLTAIC EFFECT; SILICON; SILICON OXIDES; SOLAR CELLS; THICKNESS

Citation Formats

Pisarenko, T. A., E-mail: tata-dvo@iacp.dvo.ru, Balashev, V. V., Vikulov, V. A., Dimitriev, A. A., and Korobtsov, V. V. Comparative Study of the Lateral Photovoltaic Effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si Structures. United States: N. p., 2018. Web. doi:10.1134/S1063783418070223.
Pisarenko, T. A., E-mail: tata-dvo@iacp.dvo.ru, Balashev, V. V., Vikulov, V. A., Dimitriev, A. A., & Korobtsov, V. V. Comparative Study of the Lateral Photovoltaic Effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si Structures. United States. doi:10.1134/S1063783418070223.
Pisarenko, T. A., E-mail: tata-dvo@iacp.dvo.ru, Balashev, V. V., Vikulov, V. A., Dimitriev, A. A., and Korobtsov, V. V. Sun . "Comparative Study of the Lateral Photovoltaic Effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si Structures". United States. doi:10.1134/S1063783418070223.
@article{osti_22771087,
title = {Comparative Study of the Lateral Photovoltaic Effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si Structures},
author = {Pisarenko, T. A., E-mail: tata-dvo@iacp.dvo.ru and Balashev, V. V. and Vikulov, V. A. and Dimitriev, A. A. and Korobtsov, V. V.},
abstractNote = {The results of a comparative study of the lateral photovoltaic effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si structures are presented. The lateral photovoltage reaches its maximum near the measurement contacts in both structures, but the signs of this voltage differ. As the light spot moves away from the contacts, the photovoltage varies linearly in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and decreases exponentially in Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si. It is found that interface states at the SiO{sub 2}/Si interface induce the photovoltage polarity inversion associated with a change in the conductivity type of silicon. An extreme thickness dependence of the photovoltage with an optimum Fe{sub 3}O{sub 4} film thickness of ~50 nm is observed in both structures.},
doi = {10.1134/S1063783418070223},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 7,
volume = 60,
place = {United States},
year = {2018},
month = {7}
}