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Title: Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide

Abstract

The intercalation of iron under a graphene monolayer grown on 4H-SiC(0001) is studied. The experiments have been carried out in situ under conditions of ultrahigh vacuum by low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and near carbon K-edge X-ray absorption spectroscopy. The deposited iron film thicknesses have been varied within 0.1–2 nm and the sample temperatures from room temperature to 700°C. It is shown that the intercalation process begins at temperatures higher than ~350°C. In this case, it is found that intercalated iron atoms are localized not only between graphene and a buffer layer coating SiC, but also under the buffer layer itself. The optimal conditions of the intercalation are realized in the range 400–500°C, because, at higher temperatures, the system becomes unstable due to the chemical interaction of the intercalated iron with silicon carbide. The inertness of the intercalated films to action of oxygen is demonstrated.

Authors:
; ;  [1];  [2];  [3]; ; ; ;  [1];  [3];  [1]
  1. Ioffe Institute (Russian Federation)
  2. St. Petersburg National Research University of Information Technology, Mechanics, and Optics (Russian Federation)
  3. St. Petersburg State University (Russian Federation)
Publication Date:
OSTI Identifier:
22771068
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 7; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ATOMS; BUFFERS; CLATHRATES; COATINGS; ELECTRON DIFFRACTION; ENERGY RESOLUTION; FILMS; GRAPHENE; INTERACTIONS; IRON; LAYERS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDES; SYNCHROTRON RADIATION; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THICKNESS; X-RAY SPECTROSCOPY

Citation Formats

Gomoyunova, M. V., Grebenyuk, G. S., Davydov, V. Yu., Ermakov, I. A., Eliseyev, I. A., Lebedev, A. A., Lebedev, S. P., Lobanova, E. Yu., Smirnov, A. N., Smirnov, D. A., and Pronin, I. I., E-mail: Igor.Pronin@mail.ioffe.ru. Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide. United States: N. p., 2018. Web. doi:10.1134/S1063783418070132.
Gomoyunova, M. V., Grebenyuk, G. S., Davydov, V. Yu., Ermakov, I. A., Eliseyev, I. A., Lebedev, A. A., Lebedev, S. P., Lobanova, E. Yu., Smirnov, A. N., Smirnov, D. A., & Pronin, I. I., E-mail: Igor.Pronin@mail.ioffe.ru. Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide. United States. doi:10.1134/S1063783418070132.
Gomoyunova, M. V., Grebenyuk, G. S., Davydov, V. Yu., Ermakov, I. A., Eliseyev, I. A., Lebedev, A. A., Lebedev, S. P., Lobanova, E. Yu., Smirnov, A. N., Smirnov, D. A., and Pronin, I. I., E-mail: Igor.Pronin@mail.ioffe.ru. Sun . "Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide". United States. doi:10.1134/S1063783418070132.
@article{osti_22771068,
title = {Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide},
author = {Gomoyunova, M. V. and Grebenyuk, G. S. and Davydov, V. Yu. and Ermakov, I. A. and Eliseyev, I. A. and Lebedev, A. A. and Lebedev, S. P. and Lobanova, E. Yu. and Smirnov, A. N. and Smirnov, D. A. and Pronin, I. I., E-mail: Igor.Pronin@mail.ioffe.ru},
abstractNote = {The intercalation of iron under a graphene monolayer grown on 4H-SiC(0001) is studied. The experiments have been carried out in situ under conditions of ultrahigh vacuum by low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and near carbon K-edge X-ray absorption spectroscopy. The deposited iron film thicknesses have been varied within 0.1–2 nm and the sample temperatures from room temperature to 700°C. It is shown that the intercalation process begins at temperatures higher than ~350°C. In this case, it is found that intercalated iron atoms are localized not only between graphene and a buffer layer coating SiC, but also under the buffer layer itself. The optimal conditions of the intercalation are realized in the range 400–500°C, because, at higher temperatures, the system becomes unstable due to the chemical interaction of the intercalated iron with silicon carbide. The inertness of the intercalated films to action of oxygen is demonstrated.},
doi = {10.1134/S1063783418070132},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 7,
volume = 60,
place = {United States},
year = {2018},
month = {7}
}