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Title: Energy Structure of an Individual Mn Acceptor in GaAs : Mn

Abstract

The energy structure of the Mn acceptor, which is a complex of Mn{sup 2+} ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn{sup 2+} + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.

Authors:
; ; ;  [1];  [2];  [3]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. Technische Universität Dortmund, Experimentelle Physik 2 (Germany)
  3. Lappeenranta University of Technology (Finland)
Publication Date:
OSTI Identifier:
22771056
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 8; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFORMATION; ELECTRIC FIELDS; EXCHANGE INTERACTIONS; EXCITATION; EXCITONS; GALLIUM ARSENIDES; HOLES; MAGNETIC FIELDS; MANGANESE ADDITIONS; RAMAN EFFECT; RAMAN SPECTRA; RANDOMNESS; SELECTION RULES; SPIN FLIP; STRESSES; VALENCE

Citation Formats

Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru, Krainov, I. V., Sapega, V. F., Averkiev, N. S., Debus, J., and Lähderanta, E. Energy Structure of an Individual Mn Acceptor in GaAs : Mn. United States: N. p., 2018. Web. doi:10.1134/S106378341808005X.
Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru, Krainov, I. V., Sapega, V. F., Averkiev, N. S., Debus, J., & Lähderanta, E. Energy Structure of an Individual Mn Acceptor in GaAs : Mn. United States. doi:10.1134/S106378341808005X.
Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru, Krainov, I. V., Sapega, V. F., Averkiev, N. S., Debus, J., and Lähderanta, E. Wed . "Energy Structure of an Individual Mn Acceptor in GaAs : Mn". United States. doi:10.1134/S106378341808005X.
@article{osti_22771056,
title = {Energy Structure of an Individual Mn Acceptor in GaAs : Mn},
author = {Dimitriev, G. S., E-mail: dimitriev@mail.ioffe.ru and Krainov, I. V. and Sapega, V. F. and Averkiev, N. S. and Debus, J. and Lähderanta, E.},
abstractNote = {The energy structure of the Mn acceptor, which is a complex of Mn{sup 2+} ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn{sup 2+} + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.},
doi = {10.1134/S106378341808005X},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 8,
volume = 60,
place = {United States},
year = {2018},
month = {8}
}