skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Universal Ratio of Coulomb Interaction to Geometric Quantization in (In, Ga)As/GaAs Quantum Dots

Abstract

We study the photoluminescence of self-assembled (In,Ga)As/GaAs quantum dot ensembles with varying confinement potential height. The low energy shift of the s-shell emission with increasing excitation power gives a measure of the Coulomb interaction in these structures as it results from carrier–carrier interactions between the optically injected exciton complexes. When dividing this shift by the dot level splitting, determined by the geometric confinement, we obtain a universal function of the number of involved excitons that is independent of the confinement potential height. This shows an identical scaling of Coulomb interaction and geometric quantization with varying confinement.

Authors:
 [1]; ;  [2]
  1. TU Dortmund, Experimentelle Physik 2 (Germany)
  2. Ruhr-Universität Bochum, Angewandte Festkörperphysik (Germany)
Publication Date:
OSTI Identifier:
22771046
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 8; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONFINEMENT; EXCITATION; EXCITONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERACTIONS; PHOTOLUMINESCENCE; QUANTIZATION; QUANTUM DOTS; SCALING

Citation Formats

Bayer, M., E-mail: manfred.bayer@tu-dortmund.de, Ludwig, A., and Wieck, A. Universal Ratio of Coulomb Interaction to Geometric Quantization in (In, Ga)As/GaAs Quantum Dots. United States: N. p., 2018. Web. doi:10.1134/S1063783418080024.
Bayer, M., E-mail: manfred.bayer@tu-dortmund.de, Ludwig, A., & Wieck, A. Universal Ratio of Coulomb Interaction to Geometric Quantization in (In, Ga)As/GaAs Quantum Dots. United States. doi:10.1134/S1063783418080024.
Bayer, M., E-mail: manfred.bayer@tu-dortmund.de, Ludwig, A., and Wieck, A. Wed . "Universal Ratio of Coulomb Interaction to Geometric Quantization in (In, Ga)As/GaAs Quantum Dots". United States. doi:10.1134/S1063783418080024.
@article{osti_22771046,
title = {Universal Ratio of Coulomb Interaction to Geometric Quantization in (In, Ga)As/GaAs Quantum Dots},
author = {Bayer, M., E-mail: manfred.bayer@tu-dortmund.de and Ludwig, A. and Wieck, A.},
abstractNote = {We study the photoluminescence of self-assembled (In,Ga)As/GaAs quantum dot ensembles with varying confinement potential height. The low energy shift of the s-shell emission with increasing excitation power gives a measure of the Coulomb interaction in these structures as it results from carrier–carrier interactions between the optically injected exciton complexes. When dividing this shift by the dot level splitting, determined by the geometric confinement, we obtain a universal function of the number of involved excitons that is independent of the confinement potential height. This shows an identical scaling of Coulomb interaction and geometric quantization with varying confinement.},
doi = {10.1134/S1063783418080024},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 8,
volume = 60,
place = {United States},
year = {2018},
month = {8}
}