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Title: Effect of collisions on the angular distribution of ions under plasmachemical etching

Abstract

The most important parameter responsible for the quality of high-aspect structures produced by plasmachemical etching is the angular distribution of ions near the processed surface. In this work, the effect of collisions and gas pressure on the angular distributions of ions and chemically active radicals in the chamber of a high-pressure plasmachemical reactor with a remote plasma source is analyzed theoretically.

Authors:
 [1];  [2]
  1. National Research Nuclear University “MEPhI,” (Russian Federation)
  2. Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation)
Publication Date:
OSTI Identifier:
22760289
Resource Type:
Journal Article
Journal Name:
Plasma Physics Reports
Additional Journal Information:
Journal Volume: 43; Journal Issue: 8; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-780X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANGULAR DISTRIBUTION; COLLISIONS; ETCHING; PLASMA; RADICALS

Citation Formats

Devyatko, Yu. N., E-mail: ydevyatko@mail.ru, and Fadeev, A. V., E-mail: AlexVFadeev@gmail.com. Effect of collisions on the angular distribution of ions under plasmachemical etching. United States: N. p., 2017. Web. doi:10.1134/S1063780X17080050.
Devyatko, Yu. N., E-mail: ydevyatko@mail.ru, & Fadeev, A. V., E-mail: AlexVFadeev@gmail.com. Effect of collisions on the angular distribution of ions under plasmachemical etching. United States. doi:10.1134/S1063780X17080050.
Devyatko, Yu. N., E-mail: ydevyatko@mail.ru, and Fadeev, A. V., E-mail: AlexVFadeev@gmail.com. Tue . "Effect of collisions on the angular distribution of ions under plasmachemical etching". United States. doi:10.1134/S1063780X17080050.
@article{osti_22760289,
title = {Effect of collisions on the angular distribution of ions under plasmachemical etching},
author = {Devyatko, Yu. N., E-mail: ydevyatko@mail.ru and Fadeev, A. V., E-mail: AlexVFadeev@gmail.com},
abstractNote = {The most important parameter responsible for the quality of high-aspect structures produced by plasmachemical etching is the angular distribution of ions near the processed surface. In this work, the effect of collisions and gas pressure on the angular distributions of ions and chemically active radicals in the chamber of a high-pressure plasmachemical reactor with a remote plasma source is analyzed theoretically.},
doi = {10.1134/S1063780X17080050},
journal = {Plasma Physics Reports},
issn = {1063-780X},
number = 8,
volume = 43,
place = {United States},
year = {2017},
month = {8}
}