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Title: Effect of collisions on the angular distribution of ions under plasmachemical etching

Journal Article · · Plasma Physics Reports
 [1];  [2]
  1. National Research Nuclear University “MEPhI,” (Russian Federation)
  2. Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation)

The most important parameter responsible for the quality of high-aspect structures produced by plasmachemical etching is the angular distribution of ions near the processed surface. In this work, the effect of collisions and gas pressure on the angular distributions of ions and chemically active radicals in the chamber of a high-pressure plasmachemical reactor with a remote plasma source is analyzed theoretically.

OSTI ID:
22760289
Journal Information:
Plasma Physics Reports, Vol. 43, Issue 8; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-780X
Country of Publication:
United States
Language:
English