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Title: Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF{sub 4} + 20%CO{sub 2}

Journal Article · · Physics of Atomic Nuclei
 [1];  [2]; ; ;  [1]
  1. National Research Centre Kurchatov Institute, Petersburg Nuclear Physics Institute (Russian Federation)
  2. Voronezh State University (Russian Federation)

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO{sub 2} and a 60%Ar + 30%CO{sub 2} + 10%СF{sub 4} working mixture was stimulated by a {sup 90}Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF{sub 4} + 20%CO{sub 2} gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO{sub 2} compounds was obtained.

OSTI ID:
22760228
Journal Information:
Physics of Atomic Nuclei, Vol. 80, Issue 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7788
Country of Publication:
United States
Language:
English