Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF{sub 4} + 20%CO{sub 2}
- National Research Centre Kurchatov Institute, Petersburg Nuclear Physics Institute (Russian Federation)
- Voronezh State University (Russian Federation)
A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO{sub 2} and a 60%Ar + 30%CO{sub 2} + 10%СF{sub 4} working mixture was stimulated by a {sup 90}Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF{sub 4} + 20%CO{sub 2} gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO{sub 2} compounds was obtained.
- OSTI ID:
- 22760228
- Journal Information:
- Physics of Atomic Nuclei, Vol. 80, Issue 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7788
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AGING
ANODES
ARGON
BETA SOURCES
CARBON DIOXIDE
CARBON TETRAFLUORIDE
ETCHING
GAS FLOW
IRRADIATION
LIFETIME EXTENSION
MIXTURES
PROPORTIONAL COUNTERS
SCANNING ELECTRON MICROSCOPY
SILICON
SILICON OXIDES
STRONTIUM 90
SURFACES
WIRES
X-RAY SPECTROSCOPY