On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation

Journal Article · Thu Jun 15 00:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617060148· OSTI ID:22756489

Kirienko, D. A.

A method for the separation of thin ITO (indium-tin-oxide) films from a silicon substrate by pulsed laser irradiation is studied. The method enables the detachment of films with thicknesses of 360 nm and more without their destruction. The separation process consists in successive irradiation of the surface with single microsecond laser pulses at a wavelength of 650 nm. Upon being detached from silicon substrates, the films produced by high-frequency magnetron sputtering have a transmittance of 65% in the visible spectral range and a resistivity of ~1.2 kΩ/□. The thermal stresses appearing in thin ITO films and leading to their detachment are estimated.

• OSTI ID: 22756489
• Journal Information: Semiconductors, Vol. 51, Issue 6; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LASER RADIATION
PULSED IRRADIATION
SEPARATION PROCESSES
SILICON
SUBSTRATES
THERMAL STRESSES
THIN FILMS