skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Superconducting properties of (Pb{sub 0.05}Sn{sub 0.95})Te doped with indium under conditions of hydrostatic compression

Abstract

The superconducting properties of Pb{sub 0.05}Sn{sub 0.95}Te semiconductor alloy doped with 5 at % of In are investigated at a hydrostatic pressure of P < 7 kbar. At increasing pressure P > 1.35 kbar and T ≥ 1.3 K, the resistivity step to ρ = 0 in the temperature and magnetic-field dependences ρ(T) and ρ(H), which corresponds to the transition to the superconducting state, disappears. The experimental results are indicative of a decrease in the density of states at the Fermi level with increasing pressure, which can be interpreted as an indium-level shift deep into the valence band. The obtained data refine and supplement the results of studies devoted to investigation of the baric dependences of the critical parameters of the superconducting transition in (Pb{sub z}Sn{sub 1–z}){sub 0.95}In{sub 0.05}Te with varying lead content z.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22756423
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 8; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABLATION; ALLOYS; DENSITY OF STATES; DOPED MATERIALS; FERMI LEVEL; HYDROSTATICS; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS

Citation Formats

Mikhailin, N. Yu., Parfeniev, R. V., Chernyaev, A. V., E-mail: chernyaevav@yandex.ru, Shamshur, D. V., and Andrianov, G. O. Superconducting properties of (Pb{sub 0.05}Sn{sub 0.95})Te doped with indium under conditions of hydrostatic compression. United States: N. p., 2017. Web. doi:10.1134/S106378261708022X.
Mikhailin, N. Yu., Parfeniev, R. V., Chernyaev, A. V., E-mail: chernyaevav@yandex.ru, Shamshur, D. V., & Andrianov, G. O. Superconducting properties of (Pb{sub 0.05}Sn{sub 0.95})Te doped with indium under conditions of hydrostatic compression. United States. doi:10.1134/S106378261708022X.
Mikhailin, N. Yu., Parfeniev, R. V., Chernyaev, A. V., E-mail: chernyaevav@yandex.ru, Shamshur, D. V., and Andrianov, G. O. Tue . "Superconducting properties of (Pb{sub 0.05}Sn{sub 0.95})Te doped with indium under conditions of hydrostatic compression". United States. doi:10.1134/S106378261708022X.
@article{osti_22756423,
title = {Superconducting properties of (Pb{sub 0.05}Sn{sub 0.95})Te doped with indium under conditions of hydrostatic compression},
author = {Mikhailin, N. Yu. and Parfeniev, R. V. and Chernyaev, A. V., E-mail: chernyaevav@yandex.ru and Shamshur, D. V. and Andrianov, G. O.},
abstractNote = {The superconducting properties of Pb{sub 0.05}Sn{sub 0.95}Te semiconductor alloy doped with 5 at % of In are investigated at a hydrostatic pressure of P < 7 kbar. At increasing pressure P > 1.35 kbar and T ≥ 1.3 K, the resistivity step to ρ = 0 in the temperature and magnetic-field dependences ρ(T) and ρ(H), which corresponds to the transition to the superconducting state, disappears. The experimental results are indicative of a decrease in the density of states at the Fermi level with increasing pressure, which can be interpreted as an indium-level shift deep into the valence band. The obtained data refine and supplement the results of studies devoted to investigation of the baric dependences of the critical parameters of the superconducting transition in (Pb{sub z}Sn{sub 1–z}){sub 0.95}In{sub 0.05}Te with varying lead content z.},
doi = {10.1134/S106378261708022X},
journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 51,
place = {United States},
year = {2017},
month = {8}
}