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Title: Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs

Abstract

The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoretically analyzed. It is shown for the example of a p–i–n structure with a single deep quantum well in the i-type region that the shielding of an external electric field makes the differential photoconductivity of the heterostructure higher than that in a p–i–n structure without an intermediate 2D layer.

Authors:
; ; ;  [1]
  1. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22756384
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CHARGE CARRIERS; ELECTRIC FIELDS; ELECTROSTATICS; LABELLING; MASS SPECTROSCOPY; NUCLEAR MAGNETIC RESONANCE; SHIELDING

Citation Formats

Danilov, L. V., E-mail: danleon84@mail.ru, Mikhailova, M. P., Andreev, I. A., and Zegrya, G. G. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs. United States: N. p., 2017. Web. doi:10.1134/S1063782617090081.
Danilov, L. V., E-mail: danleon84@mail.ru, Mikhailova, M. P., Andreev, I. A., & Zegrya, G. G. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs. United States. doi:10.1134/S1063782617090081.
Danilov, L. V., E-mail: danleon84@mail.ru, Mikhailova, M. P., Andreev, I. A., and Zegrya, G. G. Fri . "Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs". United States. doi:10.1134/S1063782617090081.
@article{osti_22756384,
title = {Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs},
author = {Danilov, L. V., E-mail: danleon84@mail.ru and Mikhailova, M. P. and Andreev, I. A. and Zegrya, G. G.},
abstractNote = {The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoretically analyzed. It is shown for the example of a p–i–n structure with a single deep quantum well in the i-type region that the shielding of an external electric field makes the differential photoconductivity of the heterostructure higher than that in a p–i–n structure without an intermediate 2D layer.},
doi = {10.1134/S1063782617090081},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 51,
place = {United States},
year = {2017},
month = {9}
}