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Title: Electric-field sensor based on a double quantum dot in a microcavity

Abstract

A scheme for an optical quantum external-electric-field sensor based on a double quantum dot placed in a high-Q semiconductor microcavity is proposed. A model of the dynamic processes occurring in this system is developed, its spectral characteristics are investigated, and the noise stability of the sensor is examined. It is demonstrated that, owing to design features, the device has a number of advantages, including high sensitivity, the presence of different excitation and measurement channels, and the possibility of accurate determination of the spatial field distribution.

Authors:
;  [1]
  1. Moscow Institute of Physics and Technology (Russian Federation)
Publication Date:
OSTI Identifier:
22756380
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC FIELDS; LABELLING; MASS SPECTROSCOPY; NUCLEAR MAGNETIC RESONANCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SENSORS; SPATIAL DISTRIBUTION

Citation Formats

Tsukanov, A. V., and Chekmachev, V. G., E-mail: vgchekmachev@mail.ru. Electric-field sensor based on a double quantum dot in a microcavity. United States: N. p., 2017. Web. doi:10.1134/S1063782617090214.
Tsukanov, A. V., & Chekmachev, V. G., E-mail: vgchekmachev@mail.ru. Electric-field sensor based on a double quantum dot in a microcavity. United States. doi:10.1134/S1063782617090214.
Tsukanov, A. V., and Chekmachev, V. G., E-mail: vgchekmachev@mail.ru. Fri . "Electric-field sensor based on a double quantum dot in a microcavity". United States. doi:10.1134/S1063782617090214.
@article{osti_22756380,
title = {Electric-field sensor based on a double quantum dot in a microcavity},
author = {Tsukanov, A. V. and Chekmachev, V. G., E-mail: vgchekmachev@mail.ru},
abstractNote = {A scheme for an optical quantum external-electric-field sensor based on a double quantum dot placed in a high-Q semiconductor microcavity is proposed. A model of the dynamic processes occurring in this system is developed, its spectral characteristics are investigated, and the noise stability of the sensor is examined. It is demonstrated that, owing to design features, the device has a number of advantages, including high sensitivity, the presence of different excitation and measurement channels, and the possibility of accurate determination of the spatial field distribution.},
doi = {10.1134/S1063782617090214},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 51,
place = {United States},
year = {2017},
month = {9}
}