Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

Khabibullin, R. A.; Yachmenev, A. E.; Pavlov, A. Yu.; Slapovskiy, D. N.; Glinskiy, I. A.; Lavrukhin, D. V.; Ruban, O. A.; Maltsev, P. P.

doi:10.1134/S1063782617090160

Title: Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

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Abstract

The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown GaAs (LT-GaAs) and In{sub x}Ga{sub 1–} {sub x}As with an increased content of indium (x > 0.3). It is shown that the power of Joule heating PH due to the effect of “dark” current in In{sub x}Ga{sub 1–} {sub x}As exceeds the same quantity in LT-GaAs by three–five times. This is due to the high intrinsic conductivity of In{sub x}Ga{sub 1–} {sub x}As at x > 0.38. Heatremoval equipment for the photoconductive antenna has been developed and fabricated. The results of numerical simulation show that the use of a heat sink makes it possible to reduce the operating temperature of the antenna based on LT-GaAs by 16%, of the antenna based on In{sub 0.38}Ga{sub 0.62}As by 40%, and for antennas based on In{sub 0.53}Ga{sub 0.47}As by 64%.

Authors:

Khabibullin, R. A.; Yachmenev, A. E.; Pavlov, A. Yu.; Slapovskiy, D. N.; Glinskiy, I. A.; Lavrukhin, D. V.; Ruban, O. A.; Maltsev, P. P. ^[1]

Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)

Publication Date:: Fri Sep 15 00:00:00 EDT 2017

OSTI Identifier:: 22756378

Resource Type:: Journal Article

Journal Name:: Semiconductors

Additional Journal Information:: Journal Volume: 51; Journal Issue: 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; ANTENNAS; BASES; COMPUTERIZED SIMULATION; GALLIUM ARSENIDES; HEAT SINKS; LABELLING; MASS SPECTROSCOPY; NUCLEAR MAGNETIC RESONANCE; PH VALUE; THERMODYNAMIC PROPERTIES

Citation Formats


                    Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Yachmenev, A. E., Pavlov, A. Yu., Slapovskiy, D. N., Glinskiy, I. A., Lavrukhin, D. V., Ruban, O. A., and Maltsev, P. P. Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation.  United States: N. p., 2017. 
        Web.  doi:10.1134/S1063782617090160.

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                    Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Yachmenev, A. E., Pavlov, A. Yu., Slapovskiy, D. N., Glinskiy, I. A., Lavrukhin, D. V., Ruban, O. A., & Maltsev, P. P. Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation.  United States.  https://doi.org/10.1134/S1063782617090160

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                    Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Yachmenev, A. E., Pavlov, A. Yu., Slapovskiy, D. N., Glinskiy, I. A., Lavrukhin, D. V., Ruban, O. A., and Maltsev, P. P. 2017.  
        "Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation".  United States.  https://doi.org/10.1134/S1063782617090160.

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@article{osti_22756378,

  title        = {Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation},

  author       = {Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru and Khabibullin, R. A. and Yachmenev, A. E. and Pavlov, A. Yu. and Slapovskiy, D. N. and Glinskiy, I. A. and Lavrukhin, D. V. and Ruban, O. A. and Maltsev, P. P.},

  abstractNote = {The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown GaAs (LT-GaAs) and In{sub x}Ga{sub 1–} {sub x}As with an increased content of indium (x > 0.3). It is shown that the power of Joule heating PH due to the effect of “dark” current in In{sub x}Ga{sub 1–} {sub x}As exceeds the same quantity in LT-GaAs by three–five times. This is due to the high intrinsic conductivity of In{sub x}Ga{sub 1–} {sub x}As at x > 0.38. Heatremoval equipment for the photoconductive antenna has been developed and fabricated. The results of numerical simulation show that the use of a heat sink makes it possible to reduce the operating temperature of the antenna based on LT-GaAs by 16%, of the antenna based on In{sub 0.38}Ga{sub 0.62}As by 40%, and for antennas based on In{sub 0.53}Ga{sub 0.47}As by 64%.},

  doi          = {10.1134/S1063782617090160},

  url          = {https://www.osti.gov/biblio/22756378},
  journal      = {Semiconductors},

  issn         = {1063-7826},

  number       = 9,

  volume       = 51,

  place        = {United States},

  year         = {Fri Sep 15 00:00:00 EDT 2017},

  month        = {Fri Sep 15 00:00:00 EDT 2017}

}

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