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Title: Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

Abstract

The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown GaAs (LT-GaAs) and In{sub x}Ga{sub 1–} {sub x}As with an increased content of indium (x > 0.3). It is shown that the power of Joule heating PH due to the effect of “dark” current in In{sub x}Ga{sub 1–} {sub x}As exceeds the same quantity in LT-GaAs by three–five times. This is due to the high intrinsic conductivity of In{sub x}Ga{sub 1–} {sub x}As at x > 0.38. Heatremoval equipment for the photoconductive antenna has been developed and fabricated. The results of numerical simulation show that the use of a heat sink makes it possible to reduce the operating temperature of the antenna based on LT-GaAs by 16%, of the antenna based on In{sub 0.38}Ga{sub 0.62}As by 40%, and for antennas based on In{sub 0.53}Ga{sub 0.47}As by 64%.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22756378
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; ANTENNAS; BASES; COMPUTERIZED SIMULATION; GALLIUM ARSENIDES; HEAT SINKS; LABELLING; MASS SPECTROSCOPY; NUCLEAR MAGNETIC RESONANCE; PH VALUE; THERMODYNAMIC PROPERTIES

Citation Formats

Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Yachmenev, A. E., Pavlov, A. Yu., Slapovskiy, D. N., Glinskiy, I. A., Lavrukhin, D. V., Ruban, O. A., and Maltsev, P. P. Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation. United States: N. p., 2017. Web. doi:10.1134/S1063782617090160.
Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Yachmenev, A. E., Pavlov, A. Yu., Slapovskiy, D. N., Glinskiy, I. A., Lavrukhin, D. V., Ruban, O. A., & Maltsev, P. P. Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation. United States. doi:10.1134/S1063782617090160.
Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Yachmenev, A. E., Pavlov, A. Yu., Slapovskiy, D. N., Glinskiy, I. A., Lavrukhin, D. V., Ruban, O. A., and Maltsev, P. P. Fri . "Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation". United States. doi:10.1134/S1063782617090160.
@article{osti_22756378,
title = {Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation},
author = {Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru and Khabibullin, R. A. and Yachmenev, A. E. and Pavlov, A. Yu. and Slapovskiy, D. N. and Glinskiy, I. A. and Lavrukhin, D. V. and Ruban, O. A. and Maltsev, P. P.},
abstractNote = {The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown GaAs (LT-GaAs) and In{sub x}Ga{sub 1–} {sub x}As with an increased content of indium (x > 0.3). It is shown that the power of Joule heating PH due to the effect of “dark” current in In{sub x}Ga{sub 1–} {sub x}As exceeds the same quantity in LT-GaAs by three–five times. This is due to the high intrinsic conductivity of In{sub x}Ga{sub 1–} {sub x}As at x > 0.38. Heatremoval equipment for the photoconductive antenna has been developed and fabricated. The results of numerical simulation show that the use of a heat sink makes it possible to reduce the operating temperature of the antenna based on LT-GaAs by 16%, of the antenna based on In{sub 0.38}Ga{sub 0.62}As by 40%, and for antennas based on In{sub 0.53}Ga{sub 0.47}As by 64%.},
doi = {10.1134/S1063782617090160},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 51,
place = {United States},
year = {2017},
month = {9}
}