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Title: Formation of low-dimensional structures in the InSb/AlAs heterosystem

Abstract

Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied by transmission electron microscopy and steady-state photoluminescence spectroscopy. The structures are grown under conditions of alternate In and Sb deposition (the socalled atomic-layer epitaxy mode) and the simultaneous deposition of materials (the traditional molecularbeam epitaxy mode). In both modes of growth, at a nominal amount of the deposited material in a single layer, large-sized (200 nm–1 μm) imperfect islands arranged on the In{sub x}Al{sub 1–} {sub x}Sb{sub y}As{sub 1–y} quantum-well layer are formed. In the heterostructures grown under conditions of atomic layer epitaxy, the islands are surrounded by ring-shaped arrays of much smaller (~10 nm), coherently strained islands consisting of the In{sub x}Al{sub 1–} {sub x}Sb{sub y}As{sub 1–} {sub y} alloy as well. The composition of the alloy is defined by the intermixing of Group-V materials in the stage of InSb deposition and by the intermixing of materials because of the segregation of In and Sb atoms during overgrowth of the InSb layer by an AlAs layer.

Authors:
; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22756375
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; DEPOSITION; DEPOSITS; INDIUM ANTIMONIDES; ISLANDS; LABELLING; MASS SPECTROSCOPY; MATERIALS; MOLECULAR BEAM EPITAXY; NUCLEAR MAGNETIC RESONANCE; QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Abramkin, D. S., E-mail: demid@isp.nsc.ru, Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K., and Shamirzaev, T. S. Formation of low-dimensional structures in the InSb/AlAs heterosystem. United States: N. p., 2017. Web. doi:10.1134/S1063782617090020.
Abramkin, D. S., E-mail: demid@isp.nsc.ru, Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K., & Shamirzaev, T. S. Formation of low-dimensional structures in the InSb/AlAs heterosystem. United States. doi:10.1134/S1063782617090020.
Abramkin, D. S., E-mail: demid@isp.nsc.ru, Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K., and Shamirzaev, T. S. Fri . "Formation of low-dimensional structures in the InSb/AlAs heterosystem". United States. doi:10.1134/S1063782617090020.
@article{osti_22756375,
title = {Formation of low-dimensional structures in the InSb/AlAs heterosystem},
author = {Abramkin, D. S., E-mail: demid@isp.nsc.ru and Bakarov, A. K. and Putyato, M. A. and Emelyanov, E. A. and Kolotovkina, D. A. and Gutakovskii, A. K. and Shamirzaev, T. S.},
abstractNote = {Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied by transmission electron microscopy and steady-state photoluminescence spectroscopy. The structures are grown under conditions of alternate In and Sb deposition (the socalled atomic-layer epitaxy mode) and the simultaneous deposition of materials (the traditional molecularbeam epitaxy mode). In both modes of growth, at a nominal amount of the deposited material in a single layer, large-sized (200 nm–1 μm) imperfect islands arranged on the In{sub x}Al{sub 1–} {sub x}Sb{sub y}As{sub 1–y} quantum-well layer are formed. In the heterostructures grown under conditions of atomic layer epitaxy, the islands are surrounded by ring-shaped arrays of much smaller (~10 nm), coherently strained islands consisting of the In{sub x}Al{sub 1–} {sub x}Sb{sub y}As{sub 1–} {sub y} alloy as well. The composition of the alloy is defined by the intermixing of Group-V materials in the stage of InSb deposition and by the intermixing of materials because of the segregation of In and Sb atoms during overgrowth of the InSb layer by an AlAs layer.},
doi = {10.1134/S1063782617090020},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 51,
place = {United States},
year = {2017},
month = {9}
}