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Title: Inhomogeneous dopant distribution in III–V nanowires

Abstract

We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.

Authors:
;  [1]
  1. St. Petersburg Academic University (Russian Federation)
Publication Date:
OSTI Identifier:
22756261
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIFFUSION EQUATIONS; DOPED MATERIALS; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; SPATIAL DISTRIBUTION

Citation Formats

Leshchenko, E. D., and Dubrovskii, V. G., E-mail: dubrovskii@mail.ioffe.ru. Inhomogeneous dopant distribution in III–V nanowires. United States: N. p., 2017. Web. doi:10.1134/S1063782617110173.
Leshchenko, E. D., & Dubrovskii, V. G., E-mail: dubrovskii@mail.ioffe.ru. Inhomogeneous dopant distribution in III–V nanowires. United States. doi:10.1134/S1063782617110173.
Leshchenko, E. D., and Dubrovskii, V. G., E-mail: dubrovskii@mail.ioffe.ru. Wed . "Inhomogeneous dopant distribution in III–V nanowires". United States. doi:10.1134/S1063782617110173.
@article{osti_22756261,
title = {Inhomogeneous dopant distribution in III–V nanowires},
author = {Leshchenko, E. D. and Dubrovskii, V. G., E-mail: dubrovskii@mail.ioffe.ru},
abstractNote = {We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.},
doi = {10.1134/S1063782617110173},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}