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Title: Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects

Abstract

The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials upon irradiation with neutrons are discussed. A burst in the velocity of electrons in Si, GaAs, InGaAs, and GaN before and after irradiation is calculated for the first time; also, the extent of manifestation of the above effect in different semiconductor materials is compared.

Authors:
; ; ; ; ;  [1]
  1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22756259
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; DEFECTS; GALLIUM ARSENIDES; GALLIUM NITRIDES; INDIUM ARSENIDES; SEMICONDUCTOR MATERIALS

Citation Formats

Zabavichev, I. Yu., Obolenskaya, E. S., Potekhin, A. A., Puzanov, A. S., Obolensky, S. V., E-mail: obolensk@rf.unn.ru, and Kozlov, V. A. Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects. United States: N. p., 2017. Web. doi:10.1134/S1063782617110288.
Zabavichev, I. Yu., Obolenskaya, E. S., Potekhin, A. A., Puzanov, A. S., Obolensky, S. V., E-mail: obolensk@rf.unn.ru, & Kozlov, V. A. Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects. United States. doi:10.1134/S1063782617110288.
Zabavichev, I. Yu., Obolenskaya, E. S., Potekhin, A. A., Puzanov, A. S., Obolensky, S. V., E-mail: obolensk@rf.unn.ru, and Kozlov, V. A. Wed . "Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects". United States. doi:10.1134/S1063782617110288.
@article{osti_22756259,
title = {Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects},
author = {Zabavichev, I. Yu. and Obolenskaya, E. S. and Potekhin, A. A. and Puzanov, A. S. and Obolensky, S. V., E-mail: obolensk@rf.unn.ru and Kozlov, V. A.},
abstractNote = {The distributions of the radii of subclusters of radiation-induced defects and of the distances between the cores of these subclusters are calculated for Si, GaAs, and GaN. The features of the transport of hot charge carriers in the above materials upon irradiation with neutrons are discussed. A burst in the velocity of electrons in Si, GaAs, InGaAs, and GaN before and after irradiation is calculated for the first time; also, the extent of manifestation of the above effect in different semiconductor materials is compared.},
doi = {10.1134/S1063782617110288},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}