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Title: On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors

Abstract

The times of the cascade capture of electrons at a donor–acceptor charged dipole for the case of the pulsed and steady-state excitation of impurity photoconductivity in GaAs, Ge, and Si are calculated. It is shown that the dependence of the frequency of the cascade capture on the concentration of the charged impurity becomes sublinear in semiconductors under consideration at a concentration of the charged impurity higher than 10{sup 13} cm{sup –3}.

Authors:
;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
22756258
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPTURE; DIPOLES; GALLIUM ARSENIDES; GERMANIUM; IMPURITIES; SEMICONDUCTOR MATERIALS

Citation Formats

Aleshkin, V. Ya., E-mail: aleshkin@ipmras.ru, and Gavrilenko, L. V. On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors. United States: N. p., 2017. Web. doi:10.1134/S1063782617110069.
Aleshkin, V. Ya., E-mail: aleshkin@ipmras.ru, & Gavrilenko, L. V. On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors. United States. doi:10.1134/S1063782617110069.
Aleshkin, V. Ya., E-mail: aleshkin@ipmras.ru, and Gavrilenko, L. V. Wed . "On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors". United States. doi:10.1134/S1063782617110069.
@article{osti_22756258,
title = {On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors},
author = {Aleshkin, V. Ya., E-mail: aleshkin@ipmras.ru and Gavrilenko, L. V.},
abstractNote = {The times of the cascade capture of electrons at a donor–acceptor charged dipole for the case of the pulsed and steady-state excitation of impurity photoconductivity in GaAs, Ge, and Si are calculated. It is shown that the dependence of the frequency of the cascade capture on the concentration of the charged impurity becomes sublinear in semiconductors under consideration at a concentration of the charged impurity higher than 10{sup 13} cm{sup –3}.},
doi = {10.1134/S1063782617110069},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}