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Title: Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures

Abstract

The results of growing AlN buffer layers for transistors with a high electron mobility by high-temperature ammonia MBE using Ga as a surfactant are presented. The main parameters affecting the growth and defect formation kinetics are efficient flows of precursors and the surfactant as well as the temperature of the substrate, which limits the surfactant flow because of Ga desorption from the surface. In particular, the addition of the Ga flow equal to the Al flow at a substrate temperature of 1150°C keeps the growth rate constant, changing its kinetics herewith. This approach allows to increase the surface mobility of adatoms and provides a rapid transition to the 2D growth mode. An electron mobility up to 2000 cm{sup 2}/(V s) was achieved for heterostructures with a 2D electron gas grown using a surfactant.

Authors:
; ;  [1]
  1. SemiTEq JSC (Russian Federation)
Publication Date:
OSTI Identifier:
22756257
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; AMMONIA; CRYSTAL GROWTH; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; REACTION KINETICS; SURFACTANTS; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Alexeev, A. N., Mamaev, V. V., and Petrov, S. I., E-mail: petrov@semiteq.ru. Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures. United States: N. p., 2017. Web. doi:10.1134/S1063782617110045.
Alexeev, A. N., Mamaev, V. V., & Petrov, S. I., E-mail: petrov@semiteq.ru. Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures. United States. doi:10.1134/S1063782617110045.
Alexeev, A. N., Mamaev, V. V., and Petrov, S. I., E-mail: petrov@semiteq.ru. Wed . "Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures". United States. doi:10.1134/S1063782617110045.
@article{osti_22756257,
title = {Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures},
author = {Alexeev, A. N. and Mamaev, V. V. and Petrov, S. I., E-mail: petrov@semiteq.ru},
abstractNote = {The results of growing AlN buffer layers for transistors with a high electron mobility by high-temperature ammonia MBE using Ga as a surfactant are presented. The main parameters affecting the growth and defect formation kinetics are efficient flows of precursors and the surfactant as well as the temperature of the substrate, which limits the surfactant flow because of Ga desorption from the surface. In particular, the addition of the Ga flow equal to the Al flow at a substrate temperature of 1150°C keeps the growth rate constant, changing its kinetics herewith. This approach allows to increase the surface mobility of adatoms and provides a rapid transition to the 2D growth mode. An electron mobility up to 2000 cm{sup 2}/(V s) was achieved for heterostructures with a 2D electron gas grown using a surfactant.},
doi = {10.1134/S1063782617110045},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}