skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures

Abstract

The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The characteristics of a laser heterostructure with InGaAs/GaAsP quantum wells are investigated by this technique. It is shown that photoluminescence from different layers of the structure can be recorded separately. It is established that both the frequency of the InP-like phonon mode and the photoluminescence energy can be used to determine the composition of the In{sub x}Ga{sub 1–x}P alloy. The two methods yield close results.

Authors:
 [1]; ;  [2]; ;  [1]
  1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
  2. Lobachevsky State University of Nizhny Novgorod, Physico-Technical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22756256
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; PHOTOLUMINESCENCE; QUANTUM WELLS; RAMAN SPECTROSCOPY

Citation Formats

Plankina, S. M., E-mail: plankina@phys.unn.ru, Vikhrova, O. V., Zvonkov, B. N., Nezhdanov, A. V., and Pashen’kin, I. Yu. Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures. United States: N. p., 2017. Web. doi:10.1134/S1063782617110239.
Plankina, S. M., E-mail: plankina@phys.unn.ru, Vikhrova, O. V., Zvonkov, B. N., Nezhdanov, A. V., & Pashen’kin, I. Yu. Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures. United States. doi:10.1134/S1063782617110239.
Plankina, S. M., E-mail: plankina@phys.unn.ru, Vikhrova, O. V., Zvonkov, B. N., Nezhdanov, A. V., and Pashen’kin, I. Yu. Wed . "Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures". United States. doi:10.1134/S1063782617110239.
@article{osti_22756256,
title = {Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures},
author = {Plankina, S. M., E-mail: plankina@phys.unn.ru and Vikhrova, O. V. and Zvonkov, B. N. and Nezhdanov, A. V. and Pashen’kin, I. Yu.},
abstractNote = {The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The characteristics of a laser heterostructure with InGaAs/GaAsP quantum wells are investigated by this technique. It is shown that photoluminescence from different layers of the structure can be recorded separately. It is established that both the frequency of the InP-like phonon mode and the photoluminescence energy can be used to determine the composition of the In{sub x}Ga{sub 1–x}P alloy. The two methods yield close results.},
doi = {10.1134/S1063782617110239},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}