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Title: MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

Abstract

The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.

Authors:
; ; ;  [1]; ;  [2];  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University (Russian Federation)
  2. Russian Academy of Science, Institute of Problems of Mechanical Engineering (Russian Federation)
Publication Date:
OSTI Identifier:
22756253
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; QUANTUM DOTS; SILICON CARBIDES; SUBSTRATES

Citation Formats

Reznik, R. R., E-mail: moment92@mail.ru, Kotlyar, K. P., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., and Cirlin, G. E. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate. United States: N. p., 2017. Web. doi:10.1134/S1063782617110252.
Reznik, R. R., E-mail: moment92@mail.ru, Kotlyar, K. P., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., & Cirlin, G. E. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate. United States. doi:10.1134/S1063782617110252.
Reznik, R. R., E-mail: moment92@mail.ru, Kotlyar, K. P., Shtrom, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., and Cirlin, G. E. Wed . "MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate". United States. doi:10.1134/S1063782617110252.
@article{osti_22756253,
title = {MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate},
author = {Reznik, R. R., E-mail: moment92@mail.ru and Kotlyar, K. P. and Shtrom, I. V. and Soshnikov, I. P. and Kukushkin, S. A. and Osipov, A. V. and Cirlin, G. E.},
abstractNote = {The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.},
doi = {10.1134/S1063782617110252},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}