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Title: Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation

Abstract

A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 10{sup 14} cm{sup –2} is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.

Authors:
; ; ; ;  [1]
  1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22756250
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON MOBILITY; GALLIUM NITRIDES; IRRADIATION; SILICON CARBIDES

Citation Formats

Tarasova, E. A., E-mail: thelen@yandex.ru, Obolensky, S. V., Galkin, O. E., Hananova, A. V., and Makarov, A. B.. Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation. United States: N. p., 2017. Web. doi:10.1134/S1063782617110264.
Tarasova, E. A., E-mail: thelen@yandex.ru, Obolensky, S. V., Galkin, O. E., Hananova, A. V., & Makarov, A. B.. Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation. United States. doi:10.1134/S1063782617110264.
Tarasova, E. A., E-mail: thelen@yandex.ru, Obolensky, S. V., Galkin, O. E., Hananova, A. V., and Makarov, A. B.. Wed . "Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation". United States. doi:10.1134/S1063782617110264.
@article{osti_22756250,
title = {Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation},
author = {Tarasova, E. A., E-mail: thelen@yandex.ru and Obolensky, S. V. and Galkin, O. E. and Hananova, A. V. and Makarov, A. B.},
abstractNote = {A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 10{sup 14} cm{sup –2} is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.},
doi = {10.1134/S1063782617110264},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}