Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
Abstract
It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
- Authors:
-
- Novosibirsk State University (Russian Federation)
- Publication Date:
- OSTI Identifier:
- 22756246
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; DOPED MATERIALS; GALLIUM ARSENIDES; HETEROJUNCTIONS
Citation Formats
Nikiforov, V. E., Abramkin, D. S., and Shamirzaev, T. S., E-mail: tim@isp.nsc.ru. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures. United States: N. p., 2017.
Web. doi:10.1134/S1063782617110203.
Nikiforov, V. E., Abramkin, D. S., & Shamirzaev, T. S., E-mail: tim@isp.nsc.ru. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures. United States. https://doi.org/10.1134/S1063782617110203
Nikiforov, V. E., Abramkin, D. S., and Shamirzaev, T. S., E-mail: tim@isp.nsc.ru. 2017.
"Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures". United States. https://doi.org/10.1134/S1063782617110203.
@article{osti_22756246,
title = {Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures},
author = {Nikiforov, V. E. and Abramkin, D. S. and Shamirzaev, T. S., E-mail: tim@isp.nsc.ru},
abstractNote = {It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.},
doi = {10.1134/S1063782617110203},
url = {https://www.osti.gov/biblio/22756246},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {Wed Nov 15 00:00:00 EST 2017},
month = {Wed Nov 15 00:00:00 EST 2017}
}
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