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Title: Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Abstract

The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si(001) substrate on the crystalline and optical quality of the formed III–V structures are presented. It is shown that the incorporation of the AlAs/GaAs/AlAs lattice at the initial growth stages of III–V heterostructures on Ge buffer layers grown on exact Si(001) substrates makes it possible to considerably decrease the density of threading defects and, consequently, form effectively emitting laser structures. The possibility of growing strained InGaAs quantum wells on Si(001) substrates allowing stimulated radiation in a wavelength region longer than 1100 nm is shown.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22756244
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GALLIUM ARSENIDES; GERMANIUM; INDIUM ARSENIDES; LASERS; PRESSURE RANGE KILO PA; QUANTUM WELLS; SUBSTRATES

Citation Formats

Baidus, N. V., E-mail: bnv@nifti.unn.ru, Aleshkin, V. Ya., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Rykov, A. V., Sushkov, A. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Yablonskiy, A. N., and Krasilnik, Z. F. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates. United States: N. p., 2017. Web. doi:10.1134/S1063782617110070.
Baidus, N. V., E-mail: bnv@nifti.unn.ru, Aleshkin, V. Ya., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Rykov, A. V., Sushkov, A. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Yablonskiy, A. N., & Krasilnik, Z. F. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates. United States. doi:10.1134/S1063782617110070.
Baidus, N. V., E-mail: bnv@nifti.unn.ru, Aleshkin, V. Ya., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Rykov, A. V., Sushkov, A. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Yablonskiy, A. N., and Krasilnik, Z. F. Wed . "Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates". United States. doi:10.1134/S1063782617110070.
@article{osti_22756244,
title = {Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates},
author = {Baidus, N. V., E-mail: bnv@nifti.unn.ru and Aleshkin, V. Ya. and Dubinov, A. A. and Kudryavtsev, K. E. and Nekorkin, S. M. and Novikov, A. V. and Pavlov, D. A. and Rykov, A. V. and Sushkov, A. A. and Shaleev, M. V. and Yunin, P. A. and Yurasov, D. V. and Yablonskiy, A. N. and Krasilnik, Z. F.},
abstractNote = {The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si(001) substrate on the crystalline and optical quality of the formed III–V structures are presented. It is shown that the incorporation of the AlAs/GaAs/AlAs lattice at the initial growth stages of III–V heterostructures on Ge buffer layers grown on exact Si(001) substrates makes it possible to considerably decrease the density of threading defects and, consequently, form effectively emitting laser structures. The possibility of growing strained InGaAs quantum wells on Si(001) substrates allowing stimulated radiation in a wavelength region longer than 1100 nm is shown.},
doi = {10.1134/S1063782617110070},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}